A large area of N-ZnO/P-CuS junction arrays on silicon wafer is successfully fabricated by the method of layer-by-layer
deposition cycle. The thicknesses of CuS shell are tuned by controlling the times of layer-by-layer deposition cycle.
Three samples with different CuS shell thicknesses are fabricated and their J-V characteristics show good rectification
behavior. The threshold voltages are about 2.5 V at the voltage scans of ± 3 V. The field emission properties of three
samples are inveatigated. The turn-on fields of three samples are 6.15 V/μm, 8.75 V/μm, and 10.59 V/μm, respectively.
The threshold fields of three samples are 10.46 V/μm, 13.71 V/μm, and 15.2 V/μm, respectively.