Mr. Ya-Hsien Chang Profile

Ya-Hsien Chang

Student at National Yang Ming Chiao Tung Univ.

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Author

Publications (7)

Proceedings Article | 8 February 2007 Paper

Low-threshold current low-resistance 1.3 µm InAs–InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE

Hsin-Chieh Yu, Jyh-Shyang Wang, Yan-Kuin Su, Shoou-Jinn Chang, Hao-Chung Kuo, Fang-I Lai, Y. H. Chang, Hong-Pin Yang

Proceedings Volume 6484, 64840E (2007) https://doi.org/10.1117/12.697732

KEYWORDS: Vertical cavity surface emitting lasers, Resistance, Indium arsenide, Zinc, Modulation, Diffusion, Indium gallium arsenide, Etching, Quantum wells, Metals

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Proceedings Article | 14 March 2005 Paper

Single mode 1.27-µm InGaAs:Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers

Hao-Chung Kuo, Yi-An Chang, Ya-Hsien Chang, Jung-Tang Chu, Min-Ying Tsai, Shing-Chung Wang

Proceedings Volume 5737, (2005) https://doi.org/10.1117/12.583286

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Gallium, Modulation, Antimony, Metalorganic chemical vapor deposition, Gallium arsenide, Indium gallium arsenide, Temperature metrology, Aluminum

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Proceedings Article | 31 January 2005 Paper

Fabrication of high-speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication

Hao-Chung Kuo, Y Chang, Y. Chang, K. Tseng, L. Laih, S. Wang, Hsin-Chieh Yu, Chia-Pin Sung, Hung-Pin Yang

Proceedings Volume 5624, (2005) https://doi.org/10.1117/12.577050

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Gallium, Oxides, Capacitance, Aluminum, Resistance, Picosecond phenomena, Data communications, Reliability

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Proceedings Article | 20 January 2005 Paper

Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain-compensated barriers

Yi-An Chang, Hao-Chung Kuo, Ya-Hsien Chang, Shing Chung Wang, Li-Hong Laih

Proceedings Volume 5628, (2005) https://doi.org/10.1117/12.577321

KEYWORDS: Gallium arsenide, Gallium, Quantum wells, Nitrogen, Optical simulations, Laser applications, Transparency, Temperature metrology, Indium nitride, Indium

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Proceedings Article | 16 June 2004 Paper

Improvement of kink characteristic of proton-implanted VCSEL with ITO overcoating

Fang-I Lai, Ya-Hsien Chang, Li-Hong Laih, Hao-chung Kuo, S. C. Wang

Proceedings Volume 5364, (2004) https://doi.org/10.1117/12.530023

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Eye, Semiconducting wafers, Reliability, Near field, Gallium arsenide, Gold, Gallium, Picosecond phenomena

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Proceedings Article | 16 June 2004 Paper

Improvement of high-speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs

Y. Chang, Hao-chung Kuo, Fang-I Lai, Li-Hong Laih, S. C. Wang

Proceedings Volume 5364, (2004) https://doi.org/10.1117/12.530055

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Gallium, Gallium arsenide, Metalorganic chemical vapor deposition, Indium, Aluminum, Eye, Capacitance, Resistance

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Proceedings Article | 17 June 2003 Paper

Temperature-dependent near-field emission profiles of oxide-confined vertical-cavity surface-emitting lasers

Tien-chang Lu, Wen-jun Shieu, Ya-hsien Chang, L. Laih, S. Wang

Proceedings Volume 4994, (2003) https://doi.org/10.1117/12.473600

KEYWORDS: Vertical cavity surface emitting lasers, Near field, Hole burning spectroscopy, Thermal effects, Oxides, Gallium, Aluminum, Temperature metrology, Gallium arsenide, Semiconductor lasers

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Showing 5 of 7 publications

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