Mr. Ya-Hsien Chang Profile

Mr. Ya-Hsien Chang

Student at National Chiao Tung Univ

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Author

Publications (7)

PROCEEDINGS ARTICLE | February 8, 2007

Low-threshold current low-resistance 1.3 µm InAs–InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE

Proc. SPIE. 6484, Vertical-Cavity Surface-Emitting Lasers XI

KEYWORDS: Indium gallium arsenide, Quantum wells, Indium arsenide, Modulation, Etching, Metals, Diffusion, Resistance, Zinc, Vertical cavity surface emitting lasers

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PROCEEDINGS ARTICLE | March 14, 2005

Single mode 1.27-µm InGaAs:Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers

Proc. SPIE. 5737, Vertical-Cavity Surface-Emitting Lasers IX

KEYWORDS: Indium gallium arsenide, Quantum wells, Modulation, Gallium arsenide, Aluminum, Vertical cavity surface emitting lasers, Metalorganic chemical vapor deposition, Antimony, Gallium, Temperature metrology

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PROCEEDINGS ARTICLE | January 31, 2005

Fabrication of high-speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication

Proc. SPIE. 5624, Semiconductor and Organic Optoelectronic Materials and Devices

KEYWORDS: Oxides, Modulation, Reliability, Resistance, Capacitance, Aluminum, Picosecond phenomena, Vertical cavity surface emitting lasers, Data communications, Gallium

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PROCEEDINGS ARTICLE | January 20, 2005

Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain-compensated barriers

Proc. SPIE. 5628, Semiconductor Lasers and Applications II

KEYWORDS: Quantum wells, Transparency, Gallium arsenide, Indium, Nitrogen, Laser applications, Optical simulations, Gallium, Indium nitride, Temperature metrology

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PROCEEDINGS ARTICLE | June 16, 2004

Improvement of kink characteristic of proton-implanted VCSEL with ITO overcoating

Proc. SPIE. 5364, Vertical-Cavity Surface-Emitting Lasers VIII

KEYWORDS: Gold, Eye, Modulation, Gallium arsenide, Reliability, Near field, Picosecond phenomena, Vertical cavity surface emitting lasers, Semiconducting wafers, Gallium

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PROCEEDINGS ARTICLE | June 16, 2004

Improvement of high-speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs

Proc. SPIE. 5364, Vertical-Cavity Surface-Emitting Lasers VIII

KEYWORDS: Eye, Modulation, Gallium arsenide, Indium, Resistance, Capacitance, Aluminum, Vertical cavity surface emitting lasers, Metalorganic chemical vapor deposition, Gallium

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PROCEEDINGS ARTICLE | June 17, 2003

Temperature-dependent near-field emission profiles of oxide-confined vertical-cavity surface-emitting lasers

Proc. SPIE. 4994, Vertical-Cavity Surface-Emitting Lasers VII

KEYWORDS: Oxides, Gallium arsenide, Semiconductor lasers, Near field, Thermal effects, Aluminum, Vertical cavity surface emitting lasers, Hole burning spectroscopy, Gallium, Temperature metrology

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Showing 5 of 7 publications

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