Dr. Yahya I. Alivov Profile

Dr. Yahya I. Alivov

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Publications (5)

Proceedings Article | 15 February 2008 Paper

AlGaN/SiC heterojunction bipolar transistor

Ya. Alivov, Q. Fan, X. Ni, S. Chevtchenko, I. Bhat, H. Morkoç

Proceedings Volume 6894, 68941W (2008) https://doi.org/10.1117/12.763143

KEYWORDS: Heterojunctions, Transistors, Silicon carbide, Gallium nitride, Aluminum, Metalorganic chemical vapor deposition, Diodes, Doping, Gallium, Electrical engineering

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Proceedings Article | 20 February 2007 Paper

Influence of annealing in oxygen ambient on crystal properties of rf-sputtered PZT layers on ZnO substrates

Ya. Alivov, F. Agra, B. Xiao, S. Chevtchenko, C. Litton, H. Morkoç

Proceedings Volume 6474, 64741B (2007) https://doi.org/10.1117/12.706506

KEYWORDS: Ferroelectric materials, Annealing, Zinc oxide, Crystals, Oxygen, Atomic force microscopy, X-ray diffraction, Bridges, Temperature metrology, Perovskite

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Proceedings Article | 20 February 2007 Paper

Electrical characteristics of n-ZnO/n-6H-SiC heterostructures grown by rf-sputtering

Ya. Alivov, B. Xiao, Q. Fan, D. Johnstone, C. Litton, H. Morkoç

Proceedings Volume 6474, 64740F (2007) https://doi.org/10.1117/12.713217

KEYWORDS: Zinc oxide, Heterojunctions, Silicon carbide, Diodes, Temperature metrology, Spectroscopes, Spectroscopy, Light emitting diodes, Capacitance, Fluctuations and noise

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Proceedings Article | 8 February 2007 Paper

Current-transport mechanisms of isotype n-ZnO/n-GaN heterostructures

Ya. Alivov, X. Bo, Q. Fan, S. Akarca-Biyikli, D. Johnstone, O. Lopatiuk, L. Chernyak, C. Litton, H. Morkoç

Proceedings Volume 6474, 64740E (2007) https://doi.org/10.1117/12.706300

KEYWORDS: Heterojunctions, Zinc oxide, Temperature metrology, Gallium nitride, Diffusion, Diodes, Metalorganic chemical vapor deposition, Vapor phase epitaxy, Electron beams, Fluctuations and noise

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Proceedings Article | 3 March 2006 Paper

Ferroelectric PZT/AlGaN/GaN field effect transistors

Youn-Seon Kang, Bo Xiao, Ya. Alivov, Qian Fan, Jinqiao Xie, Hadis Morko

Proceedings Volume 6121, 61210S (2006) https://doi.org/10.1117/12.657584

KEYWORDS: Ferroelectric materials, Field effect transistors, Gallium nitride, Silicon, Aluminum, Metalorganic chemical vapor deposition, Heterojunctions, Semiconductors, Modulation, Annealing

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