Dr. Yaichiro Watakabe Profile

Dr. Yaichiro Watakabe

President at Lasertec Corp

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Author

Publications (10)

Proceedings Article | 5 September 2001 Paper

Phase defect inspection by differential interference

Kiyoshi Ogawa, J. Kodama, K. Machida, Katsuyoshi Nakashima, Yaichiro Watakabe

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438389

KEYWORDS: Photomasks, Defect inspection, Prisms, Reflectivity, Inspection, Defect detection, Phase shifting, Phase interferometry, Interferometers, Databases

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Proceedings Article | 17 May 1994 Paper

Attenuated phase-shifting mask with a single-layer absorptive shifter of CrO, CrON, MoSiO, and MoSiON film

Masayuki Nakajima, Nobuyuki Yoshioka, Junji Miyazaki, Haruhiko Kusunose, Kunihiro Hosono, Hiroaki Morimoto, Wataru Wakamiya, Keiichi Murayama, Yaichiro Watakabe, Katsuhiro Tsukamoto

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175405

KEYWORDS: Photomasks, Phase shifts, Lithography, Etching, Transmittance, Excimer lasers, Semiconducting wafers, Sputter deposition, Mask making, Molybdenum

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Proceedings Article | 8 August 1993 Paper

Advanced process with magnetically enhanced RIE for phase-shifting mask fabrication

Satoshi Aoyama, Haruhiko Kusunose, Minoru Hanazaki, Nobuyuki Yoshioka, Yaichiro Watakabe, Atsushi Hayashi, Akihiko Isao, Yasuo Tokoro

Proceedings Volume 1927, (1993) https://doi.org/10.1117/12.150466

KEYWORDS: Etching, Magnetism, Chromium, Phase shifts, Protactinium, Photomasks, Optical lithography, Reactive ion etching, Critical dimension metrology, Plasma

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Proceedings Article | 1 June 1992 Paper

Novel architecture for high-speed dual-image generation of pattern data for phase-shifting reticle inspection

Kunihiro Hosono, Susumu Takeuchi, Yaichiro Watakabe, Tim Wihl, Mark Brandemuehl, David Joseph

Proceedings Volume 1673, (1992) https://doi.org/10.1117/12.59796

KEYWORDS: Inspection, Data conversion, Reticles, Phase shifts, Image resolution, Databases, Phase shifting, Image processing, Manufacturing, Integrated circuits

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Proceedings Article | 1 June 1992 Paper

Shape effects of edge-line phase shifter on light intensity contrast

Mitsunori Nakatani, Hirofumi Nakano, Haruhiko Kusunose, Kazuya Kamon, Shuichi Matsuda, Yaichiro Watakabe, Hirozo Takano, Mutuyuki Otsubo

Proceedings Volume 1674, (1992) https://doi.org/10.1117/12.130350

KEYWORDS: Phase shifts, Image processing, Photoresist processing, Optical lithography, Image resolution, Gallium arsenide, Field effect transistors, Phase shifting, Semiconducting wafers, Optoelectronics

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Proceedings Article | 1 June 1992 Paper

Novel process for phase-shifting mask fabrication

Haruhiko Kusunose, Satoshi Aoyama, Kunihiro Hosono, Susumu Takeuchi, Shuichi Matsuda, Maaike Op de Beeck, Nobuyuki Yoshioka, Yaichiro Watakabe

Proceedings Volume 1674, (1992) https://doi.org/10.1117/12.130323

KEYWORDS: Phase shifts, Chromium, Photomasks, Etching, Mask making, Ultraviolet radiation, Metals, Quartz, Inspection, Floods

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Proceedings Article | 1 July 1991 Paper

Phase-shift mask pattern accuracy requirements and inspection technology

James Wiley, Tao-Yi Fu, Takashi Tanaka, Susumu Takeuchi, Satoshi Aoyama, Junji Miyazaki, Yaichiro Watakabe

Proceedings Volume 1464, (1991) https://doi.org/10.1117/12.44447

KEYWORDS: Photomasks, Phase shifts, Inspection, Reticles, Opacity, Lithography, Semiconducting wafers, Metals, Integrated circuits, Process control

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Proceedings Article | 1 July 1991 Paper

New phase-shifting mask structure for positive resist process

Junji Miyazaki, Kazuya Kamon, Nobuyuki Yoshioka, Shuichi Matsuda, Masato Fujinaga, Yaichiro Watakabe, Hitoshi Nagata

Proceedings Volume 1464, (1991) https://doi.org/10.1117/12.44445

KEYWORDS: Phase shifts, Photomasks, Bridges, Photoresist processing, Integrated circuits, Metrology, Inspection, Process control, Printing, Electron beams

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Proceedings Article | 1 June 1990 Paper

Advanced 5x reticle inspection technologies for ULSI devices

Susumu Takeuchi, David Joseph, Miyoshi Yoshida, Koichi Moriizumi, Donald Parker, Yaichiro Watakabe

Proceedings Volume 1261, (1990) https://doi.org/10.1117/12.20046

KEYWORDS: Inspection, Databases, Reticles, Image resolution, Data conversion, Defect detection, Integrated circuits, Metrology, Process control, Raster graphics

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Proceedings Article | 1 May 1990 Paper

Gate oxide breakdown by focused ion-beam irradiation

Yuichi Nakashima, Hiroaki Morimoto, Hirohisa Yamamoto, Susumu Kato, Yaichiro Watakabe, Akihiko Yasuoka

Proceedings Volume 1263, (1990) https://doi.org/10.1117/12.20145

KEYWORDS: Oxides, Ion beams, X-ray technology, Molybdenum, Electrodes, Dielectric breakdown, Gallium, Ions, Silicon, X-ray lithography

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Dielectric breakdown of gate oxide by the focused iou beam (FIB) irradiation of the MOS structure has been studied. The sample device structure was that of an MOS transistor about to be ion-implanted in the source and drain (S/D) regions. The gate poly-silicon electrode was extended to the pad electrode on the thick field oxide. The thicknesses of the gate and field oxide layers were 25 iim and 500 mu, respectively. That of the poly-silicon layer was 250 nm. The typical areas of the gate and the pad electrodes were 31-100 jzm2 aiid 2-4x iO pm2, respectively. Gallium FIB, accelerated by 40 keV, was irradiated to sample devices. The total dose until the breakdowii depends on the irradiated location of the device. In the case that the edge of the polysilicon layer adjacent to the S/D regions is irradiated, the dose is the least. If the gate oxide layer has not been removed on the S/D regions, the dose exceeds that for the sample with the gate oxide layer etched there, although not greater than that in the case that any other part of the poly-silicon layer is irradiated. The electroluminescence measurement of some samples indicates that such edge irradiation iiiduces damages at a spot on the irradiated edge of the gate oxide. Such damages are probably due to the combiiiation of conductive microbridge formation and the electrical dielectric breakdown around the bridge. The microbridge is formed by the implantation of gallium ions, and/or adhesion of gallium and silicon atonis at the sidewall of the gate oxide. In the experiments where an area around the center of the polysilicon pad electrode was irradiated, two breakdown modes were observed: breakdown due to gate-culTent stress and instant breakdown. The gate potential during the FIB irradiation was obtained from the measured secondary electron current. The potential is approximately equal to that measured during the conventional constant-current-stress (005) lifetime experiment. This proves that gate oxide is stressed by current during irradiation. The time to breakdown becomes shorter with decrease in the gate area if the FIB current is the same. The smaller the devise becomes, the 005-like mode will be the more serious. Instant breakdown mode appears when the beam current is high. Detailed analysis reveals discrepancies between the phenomena and simple conjectures based on the 005 lifetime. By the irradiation, some samples are broken in far shorter time than expected from the 005 lifetime measurement, whereas the rest of the samples survive longer than the expectation. This suggests that there is a stronger stress at the onset of the irradiation. This breakdown mode is, at least at present, uncontrollable and most hazardous, to be overcome for improved

Showing 5 of 10 publications

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