In this text the photoelectric emission principle of X-ray cathode was introduced at first. Then we provided the manufacture method of CsI/MCP X-ray cathode, analyzed the quantum efficiency and noise characteristic of reflection type and transmission type X-ray cathode, proposed the improved process, provided the output characteristic and front and sectional stereoscan photograph of CsI/MCP and pointed out the development of Lixiscope and application prospect in biomedicine.
By observing two-photon response and anisotropy of the light-induced voltage in Si-Al Schottky barrier potential of the Si MSM (Metal-Semiconductor-Metal) planar structure two-photon response optical detector. It is certified from the experimental and theoretical analysis that the built-in electric field generated by the Schottky barrier potential will induce the phenomena of optical rectification in Si photodiode. Thus, it is deduced that there must be double-frequency absorption (DFA) caused by phase-mismatch in the mechanism of two-photon response of Si photodiode. If the intensity of the built-in electric field is strong enough, the DFA will be the main feature of the two-photon response.
The formation of deep macropore array of p-type Silicon in HF electrolyte has been investigated. Then a series of electrochemical etching experiments and tests were carried out in three poles electrobath using different concentration HF electrolyte. HF concentration is a very important factor that determined whether electrochemical reaction was accomplished or not. By means of theoretical analysis and investigation, it is generally assumed that etching proceeds through sequential reaction of Si-H groups with F<sup>-</sup> to form Si-X, which determined whether electrochemical etching reaction was carried out or not. The electrochemical etching of p-type Silicon macropore array in aqueous fluoride solutions is satisfied with economic requirements for costs of fabricating deep macropores. The consequences are benefit to Silicon electrochemical deep macropore array etching technology.
Introduced the construction of the experiment system of the laser probe measurements based on electro-optic sampling technique. Analyzed the relationship between the width of the optical pulses and the signal noise ratio of detection. The function of different stage circuit internal to the high-speed dynamic divider circuit chip have been measured with the double-frequency phase sweeping technique. A detail analysis about the chip failure have been given.