We present an improved CMOS-compatible USRN material prepared using DCS-based chemistry deposited at a low temperature of ~300°C. Morphology and composition of these USRN films are characterized using SEM, TEM, EDS and AFM. Surface profilometer is also used to estimate the film stress over an 8-inch wafer. TEM shows that the USRN film is amorphous and AFM measures a low roughness RMS of ~0.4 nm over a scan window of 3 μm x 3 μm. Optical properties of these USRN films are studied using variable-angle spectroscopic ellipsometry and FTIR spectroscopy. A prism coupler is used to estimate the film propagation loss. Ellipsometry measurement shows refractive index of around 3.09 at 1550 nm wavelength, which is our wavelength of interest. Comparing with USRN films prepared using SiH4- based chemistry, FTIR characterization shows reduced absorbance for films prepared using DCS-based chemistry at wavenumber region where Si-H bonds are located. The absorbance caused by N-H bonds are comparable for USRN films prepared using both DCS-based and SiH4-based chemistries. Si-H bonds and N-H bonds are expected to be the main sources of material absorption near 1550 nm in the USRN material. Characterization results of waveguides fabricated using USRN deposited by this DCS-based chemistry shows propagation loss of ~4.9 dB/cm for waveguide width of 1.5 μm at 1550 nm wavelength. The improved results of DCS-based USRN will help to further cut losses and therefore enhance the performance of CMOS compatible USRN devices in nonlinear signal processing.
Integrated photonic nanostructures provide powerful degrees of design freedom for the engineering of light confinement and advanced lightwave manipulation functions. The ability to tailor field profiles in these on-chip devices allows enhanced light-matter interaction, strong modal confinement and the ability to engineer dispersion. Here, we present recent developments in photonic integrated circuits towards the generation of solitons, amplification, and optical waveform manipulation. By harnessing CMOS platforms with a high nonlinear figure of merit, the existence of on-chip Bragg solitons, Bragg soliton fission and solitons in photonic waveguides are experimentally observed. These demonstrations are made possible by 1,000X larger dispersion close to the band edge in on-chip Bragg gratings, an effect that arises from the interaction of forward and backward propagating fields. In addition, efficient parametric processes facilitate wavelength conversion of light and high gain amplification of signals. These efficient nonlinear mechanisms provide a possible pathway in which to realize new approaches to efficiently manipulate optical waveforms.
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