According to the demand of laser initiating device miniaturization and low power consumption of weapon system, research on the low power pulse laser detonation circuit with super capacitor. Established a dynamic model of laser output based on super capacitance storage capacity, discharge voltage and programmable output pulse width. The output performance of the super capacitor under different energy storage capacity and discharge voltage is obtained by simulation. The experimental test system was set up, and the laser diode of low power pulsed laser detonation circuit was tested and the laser output waveform of laser diode in different energy storage capacity and discharge voltage was collected. Experiments show that low power pulse laser detonation based on super capacitor energy storage circuit discharge with high efficiency, good transient performance, for a low power consumption requirement, for laser detonation system and low power consumption and provide reference light miniaturization of engineering practice.
Proc. SPIE. 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application
KEYWORDS: Infrared detectors, Infrared sensors, Indium gallium arsenide, Detection and tracking algorithms, Sensors, Interference (communication), Control systems, Signal processing, Signal detection, Control systems design
The InGaAs Short-wave infrared detector is a temperature-sensitive device. Accurate temperature control can effectively reduce the background signal and improve detection accuracy, detection sensitivity, and the SNR of the detection system. Firstly, the relationship between temperature and detection background, NEP is analyzed, the principle of TEC and formula between cooling power, cooling current and hot-cold interface temperature difference are introduced. Then, the high precision constant current drive circuit based on triode voltage control current, and an incremental algorithm model based on deviation tracking compensation and PID control are proposed, which effectively suppresses the temperature overshoot, overcomes the temperature inertia, and has strong robustness. Finally, the detector and temperature control system are tested. Results show that: the lower of detector temperature, the smaller the temperature fluctuation, the higher the detection accuracy and the detection sensitivity. The temperature control system achieves the high temperature control with the temperature control rate is 7~8°C/min and the temperature fluctuation is better than ±0. 04°C.
According to the environmental requirement of detectors, we studied the characteristics of Si and InGaAs detectors irradiated by the Cobalt60-γray with the total dose of 5krad, 10 krad, 20 krad, 30krad respectively. We measured the dark current and relative spectral responsivity by the Relative Responsivity Measurement Apparatus before and after irradiation. The results suggest that the characteristics of Silicon and InGaAs detectors don't change obviously after different total dose irradiation, both detectors can work in the space irradiation environment due to its stability and reliability.
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