Many III-V digital alloy avalanche photodiodes have experimentally demonstrated very low excess noise. The presence of minigaps and enhanced valence band effective mass leads to the enhanced performance. Using first principle calculations and environment-dependent tight binding model we study the correlation of these properties with material parameters like stress. Furthermore, using NEGF formalism we study how these minigaps and mass enhancement impact the electron tunneling and phonon scattering processes in digital alloys. Based on our calculations, we propose some empirical inequalities for quantifying the effectiveness of such minigaps in making the device unipolar and thus high gain.
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