In Resonant Cavity Enhanced Photodetectors (RCE-PDs), the trade-off between the bandwidth and the quantum efficiency in the conventional photodetectors is overcome. In RCE-PDs, large bandwidth can be achieved using a thin absorption layer while the use of a resonant cavity allows for multiple passes of light in the absorption which boosts the quantum efficiency. In this paper, a complete bias-dependent model for the Resonant Cavity Enhanced-Separated Absorption Graded Charge Multiplication-Avalanche Photodetector (RCE-SAGCM-APD) is presented. The proposed model takes into account the case of drift velocities other than the saturation velocity, thus modeling this effect on the photodetector different design parameters such as Gain, Bandwidth and Gain-Bandwidth product.
Resonant Cavity Enhanced Photodetectors (RCE-PDs) are a possible solution to overcome the trade-off between
bandwidth and quantum efficiency in the conventional photodetectors. In RCE-PDs, thin absorption layer gives rise to a
large bandwidth, while the multiple passes of light in the absorption layer due to the resonant cavity increases the
quantum efficiency. In this paper, an extended calibrated circuit model for RCE-PIN-PD is presented. This model
includes the effects of the biasing of the photodetector resulting in the feasibility of a complete circuit simulation of the
entire photoreceiver circuit. The effects of the biasing over the performance of RCE-PIN-PDs have been studied for
different loads and different thicknesses of the absorption layer of the photodetector.
Based on the studies of different parameters for design and materials, optimization has been performed for the RCE-PINPDs.
With this optimization, the optimal values of the thickness of the absorption layer to produce the highest bandwidth
of the photodetector are obtained for different biasing values. These optimizations are performed for different areas of
the photodetector and also for different load resistors, and they result in a significant improvement in the performance of
this type of photodetector.
Waveguide photodetectors (WGPDs) are considered a leading candidate to overcome the bandwidth-quantum efficiency trade-off as the flow of the photon and carrier fluxes are perpendicular to each other enabling high date rate applications. Mushroom-WGPD was proposed to overcome the trade-off between the capacitance of the photodetector and the contact resistance. In this paper, an extended calibrated circuit model for mushroom-WGPD, including the effect of the biasing of the photodetector, is presented so resulting in the feasibility of a complete circuit simulation of the entire photoreceiver circuit. The effects of the biasing over the performance of Mushroom-WGPDs have been explored for different loads and different dimensions of the device. Based on the studies of different parameters for design and materials, optimization has been performed for the mushroom-WGPD. With this optimization, the optimal values of the thickness of the absorption layer to produce the highest bandwidth of the photodetector are obtained for different biasing values. These optimizations are performed for different areas of the photodetector and also for different load resistors, and they result in a significant improvement in the performance of the mushroom-WGPDs.
Resonant cavity enhanced photodetectors (RCE-PDs) are promising candidates for applications in high-speed optical communications and interconnections. The parasitics effects on these high-speed photodetectors must be carefully considered since they can significantly degrade the performance of the photodetector. In this paper, we will present a complete accurate model for the time response of the RCE-PDs. We will also study the effects of the parasitics of RCE-PDs on their time response and how we can compensate for the performance degradation from these parasitics. This study has been done for both RCE-PIN-PDs and RCE-avalanche photodetectors (RCE-APDs). RCE-separated absorption graded charge multiplication-APD was taken as an example of RCE-APDs. The time response of these RCE-PDs has better performance when compared to those of non RCE-PDs.
The parasitics effects include the effects of both of the load resistance and the capacitance of the photodetector. The effects of the inductor that may be added in series with the load are also studied. It is shown that adding an external inductor results in higher performance of the photodetectors and this inductor can compensate some of the degradations resulting from other parasitics. The effects of the parasitics have been investigated for different dimensions of the photodetectors, different values of both the load resistance and the added inductor and also for different multiplication gains for the case of RCE-APDs.
Waveguide Photodetector (WGPDs) are considered leading candidates to overcome the bandwidth-efficiency trade-off presented in conventional photodetectors. In this paper, we present a physical model of the waveguide-separated absorption charge multiplication-avalanche photodetector (WG-SACM-APD). Both time and frequency modeling for this photodetector are presented. The frequency response has been simulated for different thicknesses of the absorption and multiplication layers and for different areas of the photodetector.
The gain-bandwidth characteristic of WG-SACM-APD is studied for different areas and different thicknesses of both the absorption and the multiplication layers showing the dependence of the performance of the photodetector on the dimensions, the material parameters and the multiplication gain. In addition, the characteristics of WG-SACM-APD are studied for the case of an inductor added in series to the load resistor and better performance is achieved in comparison to the case with no inductor.
The results obtained from the model that is presented in this work are compared with published experimental results and good agreement has been obtained.
Resonant cavity enhanced photodetectors (RCE-PDs) are promising candidates for applications in high-speed optical communications and interconnections. In these high-speed photodetectors, both high bandwidth and high external quantum efficiency can be achieved simultaneously because of the multipaths of the incident light due to the presence of the Fabry-Perot cavity into which the photodetector is inserted. In this paper, state-of-the-art RCE-PDs are discussed. Different structures of the RCE-PDs such as RCE-PIN, RCE-APD, and RCE-MSM PDs are presented and discussed. The material requirements for the RCE PDs with different material system compositions for the different structures and different wavelengths of the incident light that the photodetectors are sensitive to, are discussed. An overview of the analysis and a SPICE model of the RCE-PDs will be presented. These analyses include the calculations of quantum efficiency, (QE), impulse response and frequency response of RCE-PDs. These analyses are sensitive to the standing wave effect (SWE) and to carrier diffusion, and both effects are studied. Optimization procedures for the design of ultrafast RCE-PDs will be presented, showing how the QE, bandwidth and speed of these photodetectors can be improved by adjusting the parameters of both the cavity and the photodetector itself. Finally, comparisons to experimental results and a survey of the performance of state-of-the-art of RCE-PDs will be presented.
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