The theoretical limit photoelectric conversion efficiency of the new perovskite/silicon-based tandem solar cell can reach 42%, which has attracted wide attention due to its wide spectral response and low preparation cost. At present, the optical loss of the mechanical stack is large, so the optical design of the laminated battery is crucial. In this paper, perovskite/silicon-based laminated cells with backplate grating structure are used as models to analyze the optical absorption characteristics of stacked battery by FDTD. The results show that the parameters such as the period and height of the backplane grating structure are effective in improving absorption of long wavelength photons in bottom cells, which provides a theoretical basis for the further design of a new perovskite/silicon-based laminate battery.
A planar structure consisting of graphene layer as the hole transport material, and n-type silicon as substrate is simulated. The degradation of this cell caused by high interface state density has been carried out. The simulated results match published experimental results indicating the accuracy of the physics-based model. Using this model, the effect of interface state density as zero, 1×10<sup>16</sup>cm<sup>-2</sup>, 1×10<sup>17</sup>cm<sup>-2</sup> on the photovoltaic performance has been studied. The obtained IV and EQE characteristic based on realistic parameters shows that the interface state playing a prominent role in graphene silicon schottky contact.
The performance of graphene based Schottky junction solar cell on silicon substrate is studied theoretically by TCAD Silvaco tools. We calculate the current-voltage curves and internal quantum efficiency of this device at different conditions using tow dimensional model. The results show that the power conversion efficiency of Schottky solar cell dependents on the work function of graphene and the physical properties of silicon such as thickness and doping concentration. At higher concentration of 1e17cm-3 for n-type silicon, the dark current got a sharp rise compared with lower doping concentration which implies a convert of electron emission mechanism. The biggest fill factor got at higher phos doping predicts a new direction for higher performance graphene Schottky solar cell design.