PROCEEDINGS ARTICLE | March 12, 2008
Proc. SPIE. 6924, Optical Microlithography XXI
KEYWORDS: Logic, Manufacturing, Printing, Very large scale integration, Photomasks, Double patterning technology, Optical proximity correction, Critical dimension metrology, Optics manufacturing, Model-based design
As the VLSI technology scales into deep submicron nodes, Double Patterning Technology (DPT) has shown its necessity
for the under 45nm processes. However, the litho-related and process-related issues, such as the overlay control for CD
uniformity, decomposition, feature stitching technology and some other problems make up the main challenges for the
implementation of DPT. Due to Optical Proximity Correction (OPC), the complexity and data volume of DPT increase
dramatically, which severely increase the application cost and create manufacturability problems.
In this paper, we mainly talk about the interactions between DPT and OPC and propose a new Model-Based OPC
methods for the decomposition in DPT procedures. To address the printing problems with cutting sites for feature split,
we introduce an overlap correction method on the stitching locations. For any re-cut and/or redesigned pattern after
verification, we categorize DP decompositions and introduce a new Adaptable OPC (Ad-OPC) algorithm by reusing post
OPC layout to speed up the correction and improve its convergence according to environment surrounding. The method
can be easily incorporated into existing MB-OPC framework. To test this method, total Edge Placement Error (EPE) and
runtime are calculated in our experiments. Results show that over 90% runtime can be saved compared with
conventional OPC procedure. It increases the robustness and friendliness of pattern correction as well as stitches features
back satisfactorily.
