Dr. Yi Fu
at Virginia Commonwealth Univ
SPIE Involvement:
Author
Publications (9)

PROCEEDINGS ARTICLE | February 8, 2007
Proc. SPIE. 6473, Gallium Nitride Materials and Devices II
KEYWORDS: Gallium nitride, Aluminum nitride, Silicon carbide, Etching, Scanning electron microscopy, Aluminum, Annealing, Vapor phase epitaxy, Gallium, Atomic force microscopy

PROCEEDINGS ARTICLE | February 8, 2007
Proc. SPIE. 6473, Gallium Nitride Materials and Devices II
KEYWORDS: Aluminum, Gallium nitride, Heterojunctions, Gallium, Polarization, Epitaxial lateral overgrowth, Metalorganic chemical vapor deposition, Sensors, Interfaces, Reactive ion etching

PROCEEDINGS ARTICLE | February 8, 2007
Proc. SPIE. 6473, Gallium Nitride Materials and Devices II
KEYWORDS: Gallium nitride, Transmission electron microscopy, Metalorganic chemical vapor deposition, Silicon carbide, Sapphire, Diodes, Epitaxial lateral overgrowth, Tin, Nickel, Thin films

PROCEEDINGS ARTICLE | February 8, 2007
Proc. SPIE. 6473, Gallium Nitride Materials and Devices II
KEYWORDS: Gallium nitride, Silicon carbide, Annealing, Metalorganic chemical vapor deposition, Surface finishing, Interfaces, Hydrogen, Transmission electron microscopy, Etching, Scanning electron microscopy

PROCEEDINGS ARTICLE | February 8, 2007
Proc. SPIE. 6473, Gallium Nitride Materials and Devices II
KEYWORDS: Gallium nitride, Epitaxial lateral overgrowth, Metalorganic chemical vapor deposition, Sapphire, Temperature metrology, Luminescence, Diodes, Gallium, Dielectrics, Metals

PROCEEDINGS ARTICLE | February 8, 2007
Proc. SPIE. 6473, Gallium Nitride Materials and Devices II
KEYWORDS: Aluminum, Gallium nitride, Gallium, Resistance, Etching, Heterojunctions, Silicon, Epitaxial lateral overgrowth, Statistical analysis, Atomic force microscopy

Showing 5 of 9 publications
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