Dr. Yi Fu
at Virginia Commonwealth Univ
SPIE Involvement:
Author
Publications (9)

PROCEEDINGS ARTICLE | February 8, 2007
Proc. SPIE. 6473, Gallium Nitride Materials and Devices II
KEYWORDS: Etching, Annealing, Atomic force microscopy, Scanning electron microscopy, Gallium nitride, Aluminum, Aluminum nitride, Silicon carbide, Gallium, Vapor phase epitaxy

PROCEEDINGS ARTICLE | February 8, 2007
Proc. SPIE. 6473, Gallium Nitride Materials and Devices II
KEYWORDS: Polarization, Sensors, Interfaces, Gallium nitride, Aluminum, Reactive ion etching, Metalorganic chemical vapor deposition, Gallium, Heterojunctions, Epitaxial lateral overgrowth

PROCEEDINGS ARTICLE | February 8, 2007
Proc. SPIE. 6473, Gallium Nitride Materials and Devices II
KEYWORDS: Thin films, Nickel, Transmission electron microscopy, Gallium nitride, Sapphire, Diodes, Silicon carbide, Metalorganic chemical vapor deposition, Epitaxial lateral overgrowth, Tin

PROCEEDINGS ARTICLE | February 8, 2007
Proc. SPIE. 6473, Gallium Nitride Materials and Devices II
KEYWORDS: Etching, Annealing, Interfaces, Hydrogen, Scanning electron microscopy, Transmission electron microscopy, Gallium nitride, Silicon carbide, Metalorganic chemical vapor deposition, Surface finishing

PROCEEDINGS ARTICLE | February 8, 2007
Proc. SPIE. 6473, Gallium Nitride Materials and Devices II
KEYWORDS: Metals, Luminescence, Dielectrics, Gallium nitride, Sapphire, Diodes, Metalorganic chemical vapor deposition, Gallium, Epitaxial lateral overgrowth, Temperature metrology

PROCEEDINGS ARTICLE | February 8, 2007
Proc. SPIE. 6473, Gallium Nitride Materials and Devices II
KEYWORDS: Statistical analysis, Etching, Silicon, Resistance, Atomic force microscopy, Gallium nitride, Aluminum, Gallium, Heterojunctions, Epitaxial lateral overgrowth

Showing 5 of 9 publications
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