Three dry etching processes using a high ion density inductively coupled plasma (ICP) system in fabrication of optoelectronic device have been briefly presented in this paper. Smooth etched surface, high rate and selectivity ICP InP etching using Cl<sub>2</sub>/CH<sub>4</sub>/N<sub>2</sub> have been demonstrated first time in fabrications of semiconductor laser. Low damage CH<sub>4</sub>/H<sub>2</sub> ICP InP sub-micron grating etching using SiN<sub>x</sub> mask can be used for SG-DBR tunable laser fabrication. Anisotropic Cl<sub>2</sub>/CH<sub>4</sub>/Ar ICP etching with vertical profile has been used for GaAs/AlGaAs DBR layers etching in vertical cavity surface emitting laser (VCSEL) fabrication. The etching characteristics have been investigated by conventional optical microscopy and scanning electron microscopy (SEM).
We successfully fabricated the angled strip DC-PBH style SLED devices by using low damage ICP dry etching technology. The mesa of DC-PBH SLED was formed by Cl<sub>2</sub>/N<sub>2</sub> ICP dry etching process. The low DC bias (<100 eV) of ICP etching technology can reduce the damage caused by ordinary RIE technique and Cl<sub>2</sub>/N<sub>2</sub> based process can get rid of chemical damage caused by CH<sub>4</sub>/H<sub>2</sub>. High out-put power SLED device was obtained by using low damage ICP dry etching, the out-put power is 2 mW at 100 mA inject current (CW) at 25°C. Through optimized the angle of the active strip and AR optical film design, the full width of the half maximum (FWHM) of the spectrum at 2 mW out-put power can reach 46.4nm and the ripple of the SLED spectrum is low down to 0.4 dB.