We present fabrication and characterization of 1.3-μm InAs quantum dot (QD) vertical cavity surface emitting lasers
(VCSELs) and QD-VCSEL arrays. The continuous-wave (CW) output power of single QD-VCSEL of 1.2 mW with
lasing wavelength of 1.28 μm is obtained at room temperature (RT) at a bias current of 15 mA without power saturation.
The low threshold current of 1.1 mA can be achieved for the single mode device. We investigate the 3-dB modulation
bandwidth of QD-VCSELs with oxide aperture size of 5-μm, 10-μm and 15-μm in the small signal frequency response
measurements. Modulation bandwidth of 2.65 GHz is achieved for single-mode QD-VCSEL with oxide aperture size of
5 μm at a bias current of 4.5 mA. The maximum modulation bandwidth of 2.5 GHz can be obtained for multimode QD-VCSEL
with oxide aperture size of 10 μm at a bias current of 7 mA. The 61 QD-VCSELs array is also investigated at
RT without optimization. Maximum CW output power of 28 mW and pulsed output power of 18 mW are demonstrated
for 2-D QD-VCSEL array with threshold current of 50 mA. The far field pattern beam angle of QD-VCSEL arrays at
two perpendicular directions are about 18 degree.
We present the 1.3-μm InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with novel planar
electrodes configuration. The lasing wavelength is around 1274 nm. The lowest threshold current of wafer level device is
~1 mA, which corresponds to a low threshold current density of ~1.3 kA/cm<sup>2</sup> or 76 A/cm<sup>2</sup> per QD layer. The maximum
output power of 1 mW can be obtained at room temperature. High temperature stability can be seen in temperature
dependence <i>L-I</i> characteristics of InAs QD VCSEL 3-dB modulation frequency response of 1.7 GHz can be obtained in
the small signal response measurements.