Ms. Ying Shi Profile

Ying Shi

at Shanghai Institute of Technical Physics

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Proceedings Article | 12 March 2021 Paper

Design and analysis high extinction ratio monolithic polarization-integrated super pixel long wavelength infrared detectors

Jian Zhou, Yi Zhou, Fangfang Wang, Zhicheng Xu, Zhizhong Bai, Ying Shi, Zhaoming Liang, Lulu Zheng, Jianxin Chen

Proceedings Volume 11763, 117638G (2021) https://doi.org/10.1117/12.2587591

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The polarization-integrated infrared detector (PIID) can distinguish the intrinsic property polarization of artificial target and background, and improve the capability of target detection and recognition. In this paper, we use the finite element method (FEM) to build the physical model of long wavelength (LWIR) PIID (8-14um) detector based on InAs/GaSb II superlattices (T2SLs). Our calculation results show thate grating array period, grating line width and thickness can effectively influence the light crosstalk between adjacent pixels, which is the key to the device extinction ratio. In addition, we design micro-structure to PIID, which plays an important role in improving device extinction. As a result, the extinction ratio was improved from 75:1 to 610:1 at the wavelength of 10.9μm. The physical mechanism of suppressing extinction ratio is analyzed in detail.

Proceedings Article | 31 January 2020 Paper

The light crosstalk suppression between adjacent pixels in polarization-integrated infrared detectors

Jian Zhou, Yi Zhou, Ying Shi, Zhicheng Xu, Jianxin Chen

Proceedings Volume 11427, 1142738 (2020) https://doi.org/10.1117/12.2552973

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The polarization-integrated infrared detector (PIID) can effectively improve the detection and recognition ability of the target by utilizing the significant difference in polarization between the artificial target and the natural background. However, the existing PIID generally has a problem that the light crosstalk between adjacent pixels is relatively high, as a result, the polarization extinction ratio is lowered. In this paper, we use the finite element method (FEM) to build the physical model of PIID (3-5um) detector based on InAs/GaSb II superlattices (T2SLs) and simulate the influence of varied grating parameters (array period, line width, thickness, metal materials, etc.), channel passivation layer, substrate thickness and pixel size on the light crosstalk of adjacent pixels under front and back illumination. The calculation results show that reducing the grating array period, increasing the grating line width and thickness, increasing the pixel size, reducing the substrate thickness and the channel width can effectively suppress the light crosstalk between adjacent pixels and improve the device extinction ratio. However, increasing the polarization extinction ratio brings the problem of reducing the quantum efficiency of the device. Integrated optical design of our follow-up work in this paper such as reflection film, anti-reflection film, and light field control in different functional areas of the device is being considered. PIID with high extinction ratio and high quantum efficiency can be simultaneously obtained by electron beam lithography.

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