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Yiqing Ye

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Proceedings Article | 15 February 2022 Paper

Method for detecting surface roughness of silicon carbide substrate based on parallel differential confocal microscope

Yile Liu, Yi Dingrong, Xingxing Zhu, Yiqing Ye

Proceedings Volume 12166, 121663I (2022) https://doi.org/10.1117/12.2616420

KEYWORDS: Confocal microscopy, Surface roughness, Silicon carbide, Microscopes, Image processing, Data processing, Optical testing, Atomic force microscope, Signal processing, Cameras

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Silicon carbide belongs to the third generation of semiconductor materials. The silicon carbide substrate is the cornerstone of silicon carbide applications. It is gradually infiltrating the application in the field of new energy. Its surface roughness affects its conductivity and contact properties as a chip. Therefore, the detection of its roughness becomes more and more important. After experimentation, the existing mature commercial precision measuring instruments such as stylus profilometer and white light interferometer cannot simultaneously realize high-precision and non-destructive measurement in terms of principle and efficiency. This paper proposes a non-contact measurement method based on a parallel differential confocal microscope to measure its surface roughness. By moving the stage on the object side, the sample is imaged twice before and after the focus. The differential curve can get the height of the surface of the object, get the three-dimensional height of the surface to be measured, and then calculate the roughness value. After analyzing the measurement results, it is found that the measurement results have a certain degree of authenticity and reference. In this way, a measurement method based on a parallel confocal microscope is proposed, or the surface roughness of the silicon carbide substrate can be measured.

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