Prof. Yong-Young Noh Profile

Prof. Yong-Young Noh

Professor at Pohang Univ of Science and Technology

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Publications (3)

Proceedings Article | 10 September 2019 Presentation

High performance printed p-type metal halide and oxide thin film transistors (Conference Presentation)

Yong-Young Noh

Proceedings Volume 11097, 1109706 (2019) https://doi.org/10.1117/12.2526865

KEYWORDS: Oxides, Transistors, Thin films, Metals, P-type semiconductors, Semiconductors, Amorphous semiconductors, Transparency, Transparent semiconductors, Copper

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Proceedings Article | 19 September 2017 Presentation

Development of printed large area organic transistors and integrated circuits (Conference Presentation)

Yong-Young Noh

Proceedings Volume 10366, 103660F (2017) https://doi.org/10.1117/12.2271512

KEYWORDS: Field effect transistors, Semiconductors, Polymers, Dielectrics, Transistors, Electronics, Integrated circuits, Logic, Point-of-care devices, Capacitance

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For at least the past 10 years, printed electronics has promised to revolutionize our daily life by making cost-effective electronic circuits and sensors available through mass production techniques, for their ubiquitous applications in wearable components, rollable and conformable devices, and point-of-care applications. In this presentation, I will give a talk on the recent progressive of my group on development of printed organic integrated circuits. I will mainly talk about on development of high performance inkjet printed unipolar and ambipolar polymer field-effect transistors (FETs), and applications to elementary organic complementary logic circuits by applying novel polymer dielectrics, new organic semiconducting and design new printing processes. In particular, we engineered and introduce new concept based for solution processed solid-state electrolyte gate insulators (SEGIs) by precise blending of P(VDF-TrFE) solution and P(VDF-HFP)-[EMIM][TFSI] gel solution resulting, after deposition of a thin film solid gate dielectric FETs, in ultrahigh field-effect mobility (μFET) and stable devices operating at low-voltage for several classes of unconventional semiconductors including -conjugated polymers, metal-oxides and other carbonaceous materials. By adding a minute amount (3% volume ratio for the optimal composition) of P(VDF-HFP)-[EMIM][TFSI] to the bulk fluorinated P(VDF-TrFE), high areal capacitance of > 4 µFcm-2 is reached thanks to the combined polarization of the -C-F interface dipoles and electrical double layers formation. To eliminate the integral complexity in differentiating field induced charge carriers from any possible carriers resulting from electrochemical doping of the semiconducting layer, we systematically measured the specific capacitance for each semiconductor/dielectric FET combination to avoid overestimation of the μFET extraction in our SEGI devices - a major common issue in several publications. For instance, with our engineered SEGIs, unprecedented hole mobility increase from ~10-2 to 5 cm2V-1s-1 (corresponding ~37 cm2V-1s-1 by commonly used method) at ≤ 2 V operation is reached in commercially available poly(3-hexylthiophene-2,5-diyl) (P3HT) FETs, and μFET exceeding 10 cm2V-1s-1 in others semiconductors.

Proceedings Article | 4 April 2005 Paper

Organic thin film phototransistors: materials and mechanism

Yong-Young Noh, Dong-Yu Kim, Yuji Yoshida, Kiyoshi Yase, Byung-Jun Jung, Eunhee Lim, Hong-Ku Shim

Proceedings Volume 5724, (2005) https://doi.org/10.1117/12.592435

KEYWORDS: Field effect transistors, Ultraviolet radiation, Phototransistors, Photovoltaics, Thin films, Electrodes, Optoelectronic devices, Semiconductors, Measurement devices, Electrons

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