We review recent progress made on the hybrid silicon platform towards realizing an integrated high speed WDM
transmitter on silicon. Using ion implantation enhanced quantum well intermixing, four band gaps are integrated on a
single chip and used to demonstrate a DFB laser array operating over 200 nm from 1250 to 1450 nm. Results from an
independent effort to improve on hybrid silicon EA modulator performance are also described. Together these
demonstrations pave the way to realize a terabit transmitter on silicon.
A bidirectional grating serving both, as a polarization beam splitter and a vertical coupler for Silicon on Insulator
nanophotonic circuits is fabricated and characterized. The measured coupling efficiency is as high as 43%. The
demonstrated device has a large 3-dB bandwidth and a high extinction ratio between two orthogonal polarizations.
We study the electrical and optical characteristic of the width-reduced line-defect photonic crystal waveguides with lateral p-i-n structures on Silicon-on-Insulator substrates. A longitudinal-section-based electrical model is built to take the holes into consideration. Compared with the classical line-defect photonic crystal waveguides, the width reduced photonic crystal waveguide has much stronger capacity in optical confinement in plane, which can allow a narrower intrinsic layer that leads to a fast electric response.