Polysilane waveguides present advantages of ease in processing using photo-bleaching technology for drawing Bragg
grating on the polysilane film and a larger thermo-optic (T/O) effect more than silica. In this paper we present the
tunable lasers (TLs) composed of the LD module and the optical switch and grating circuits, and those characteristics.
The TLs oscillate with the reflected wave at the Bragg grating. The switches and Bragg gratings, which are fabricated on
the polysilane waveguide, are used for rough and fine tuning operations. The switches are composed of directional
couplers with the thin film metal heaters. A channel selection at each output port is performed by choosing specific
heaters. The wavelength fine tuning is performed with T/O effect on the Bragg grating. The laser oscillation with the
monolithic optical circuit showed that the oscillation wavelength was 1564.16 nm, laser power was -9 dBm, oscillation
bandwidth was less than 0.1 nm and the power ratio between main and side modes was more than 30 dB.
The polysilane optical waveguide fabrications by using photo-bleaching technology with the UV lamp and the UV laser
direct drawing technologies are reported. The characteristics of the 1xN optical waveguide splitters and the
semiconductor tunable lasers (STLs) with polymer tunable external resonators are presented. An average propagation
loss of the straight waveguide was less than 0.7dB/cm at 1550 nm. PDL was measured less than 0.5 dB in the case of 1×8
splitter. The insertion loss of 1×4 splitter patterned by laser drawing method was measured less than 7.5 dB/cm. In the
STLs the external resonator consists of a singlemode polysilane waveguide and a Bragg grating filter. The power ratio
between main and side modes was over 30 dB. Laser power was measured as 5.6 mW at 70% reflective index of the
Laser oscillation with polysilane waveguide tunable external resonator was observed at 1537nm. The resonator consists
of the polysilane single-mode waveguide and the Bragg grating on the core. 5.6 mW laser power was obtained with 70%
Bragg reflection. The wavelength shift due to resonator temperature was measured as 0.096 nm/°C in the range of 30-70°C.