Mr. Yoshiharu Ono Profile

Yoshiharu Ono

at Toshiba Corp

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Author

Publications (3)

Proceedings Article | 2 April 2007 Paper

Development of high-performance multi-layer resist process with hardening treatment

Yoshiharu Ono, Takeo Ishibashi, Atsumi Yamaguchi, Tetsuro Hanawa, Masahiro Tadokoro, Kazunori Yoshikawa, Kazumasa Yonekura, Keiko Matsuda, Takeshi Matsunobe, Yasushi Fujii, Takeshi Tanaka

Proceedings Volume 6519, 65192O (2007) https://doi.org/10.1117/12.707615

KEYWORDS: System on a chip, Plasma treatment, Refractive index, Etching, Reflectivity, Carbon, Plasma, FT-IR spectroscopy, Raman spectroscopy, Photoresist processing

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Proceedings Article | 26 March 2007 Paper

OPC-free on-grid fine random hole pattern formation utilizing double resist patterning with double RETs

Shuji Nakao, Shinroku Maejima, Takeshi Yamamoto, Yoshiharu Ono, Junjiro Sakai, Atsumi Yamaguchi, Akira Imai, Tetsuro Hanawa, Kazuyuki Sukoh

Proceedings Volume 6520, 65203W (2007) https://doi.org/10.1117/12.711055

KEYWORDS: Optical lithography, Scanning electron microscopy, Photography, Double patterning technology, Photomasks, Photoresist processing, Resolution enhancement technologies, Argon, Ion implantation, Current controlled current source

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Proceedings Article | 22 March 2007 Paper

Defect transfer from immersion exposure process to post processing and defect reduction using novel immersion track system

Osamu Miyahara, Takeshi Shimoaoki, Shinya Wakamizu, Junichi Kitano, Yoshiharu Ono, Shinroku Maejima, Tetsuro Hanawa, Kazuyuki Suko

Proceedings Volume 6519, 651924 (2007) https://doi.org/10.1117/12.711354

KEYWORDS: Etching, Immersion lithography, Photoresist processing, Semiconducting wafers, Lithography, Thin film coatings, Scanning electron microscopy, Defect inspection, Photography, Lens design

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As a promising way to scale down semiconductor devices, 193-nm immersion exposure lithography is being developed at a rapid pace and is nearing application to mass production. This technology allows the design of projection lens with higher numerical aperture (NA) by filling the space between the projection lens and the silicon wafer with a liquid (de-ionized water). However, direct contact between the resist film and water during exposure creates a number of process risks. There are still many unresolved issues and many problems to be solved concerning defects that arise in 193-nm immersion lithography. The use of de-ionized water during the exposure process in 193-nm immersion lithography can lead to a variety of problems. For example, the trapping of microscopic air bubbles can degrade resolution, and residual water droplets left on the wafer surface after immersion exposure can affect resolution in the regions under those droplets. It has also been reported that the immersion of resist film in de-ionized water during exposure can cause moisture to penetrate the resist film and dissolve resist components, and that immersion can affect critical dimensions as well as generate defects. The use of a top coat is viewed as one possible way to prevent adverse effects from the immersion of resist in water, but it has been reported that the same problems may occur even with a top coat and that additional problems may be generated, such as the creation of development residues due to the mixing of top coat and resist. To make 193-nm immersion lithography technology practical for mass production, it is essential that the above defect problems be solved. Importance must be attached to understanding the conditions that give rise to residual defects and their transference in the steps between lithography and the etching/cleaning processes. In this paper, we use 193-nm immersion lithography equipment to examine the transference (traceability) of defects that appear in actual device manufacturing. It will be shown that defect transfer to the etching process can be significantly reduced by the appropriate use of defect-reduction techniques.

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