Dr. Young C. Bae Profile

Dr. Young C. Bae

Sales Director at Rohm and Haas Electronic Materials, LLC

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Publications (14)

Proceedings Article | 16 April 2011 Paper

Fundamental investigation of negative tone development (NTD) for the 22nm node (and beyond)

Dario Goldfarb, Larry Zhuang, Jason Meiring, Michael Reilly, Karen Petrillo, Sean Burns, Martin Burkhardt, Guillaume Landie, Yongan Xu, Matthew Colburn, Kenji Yoshimoto, Cecily Andes, Anthony Scaduto, Young Bae, Vaishali Vohra, Martin Glodde, Jason Desisto

Proceedings Volume 7972, 797206 (2011) https://doi.org/10.1117/12.882843

KEYWORDS: Photoresist developing, Photoresist materials, Polymers, Systems modeling, Semiconducting wafers, Optical lithography, Optical proximity correction, Photomasks, Etching, Nanoimprint lithography

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Proceedings Article | 16 April 2011 Paper

Negative tone development: gaining insight through physical simulation

John Biafore, Michael Reilly, Mark Smith, Young Bae, Stewart Robertson

Proceedings Volume 7972, 79720Y (2011) https://doi.org/10.1117/12.879506

KEYWORDS: Image processing, Systems modeling, Data modeling, Photoresist processing, Neodymium, Image quality, Photoresist developing, Photoresist materials, Lithography, Polymers

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Proceedings Article | 16 April 2011 Paper

Developer effect on the negative tone development process under low NILS conditions

Rosemary Bell, Lori Joesten, Young Bae, George Barclay, Seung-Hyun Lee

Proceedings Volume 7972, 797207 (2011) https://doi.org/10.1117/12.882141

KEYWORDS: Nanoimprint lithography, Image processing, Photoresist processing, Imaging systems, Lithography, Semiconducting wafers, Photomasks, Photoresist developing, Image resolution, Critical dimension metrology

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Proceedings Article | 31 March 2010 Paper

Improving CD uniformity for thermal cured systems in double patterning

Young Bae, Ken Spizuoco, Lori Joesten, Yi Liu

Proceedings Volume 7639, 76391X (2010) https://doi.org/10.1117/12.846602

KEYWORDS: Photoresist processing, Standards development, Solids, Double patterning technology, Image processing, Semiconducting wafers, Industrial chemicals, Chemical reactions, Thermal effects, Coating

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Proceedings Article | 26 March 2010 Paper

Evolution of thermal cure resist for double patterning applications

Matthew Colburn, Michael Reilly, Vaishali Vohra, Young Bae, Chiew-Seng Koay

Proceedings Volume 7639, 76392W (2010) https://doi.org/10.1117/12.846748

KEYWORDS: Double patterning technology, Lithography, Photoresist processing, Semiconducting wafers, Electroluminescence, Astatine, Semiconductors, Image processing, Etching, Polymers

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Proceedings Article | 26 March 2010 Paper

Advanced patterning solutions based on the shrink process assisted by double exposure (SPADE)

Young Bae, Thomas Cardolaccia, George Barclay, Rosemary Bell, Ken Spizuoco, Yi Liu

Proceedings Volume 7639, 76390C (2010) https://doi.org/10.1117/12.848047

KEYWORDS: Double patterning technology, Optical lithography, Photoresist processing, Semiconducting wafers, Lithography, Immersion lithography, Image processing, Coating, Extreme ultraviolet lithography, Image resolution

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Proceedings Article | 11 December 2009 Paper

Advanced patterning solutions based on double exposure: double patterning and beyond

Lori Joesten, Young Bae, Michael Reilly, Rosemary Bell, Yi Liu, Amandine Pikon, George Barclay, Ken Spizuoco, Peter Trefonas, Sheri Ablaza, Thomas Cardolaccia

Proceedings Volume 7520, 75201G (2009) https://doi.org/10.1117/12.840461

KEYWORDS: Double patterning technology, Optical lithography, Photoresist processing, Image processing, Lithography, Semiconducting wafers, Chemical reactions, Coating, Control systems, Liquids

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The CD control of the first lithography (L1) patterns is a important issue in the single-etch double patterning (SEDP) process. In this process, L1 patterns are cured either chemically or thermally and then subjected to the second lithography (L2). A chemical curing process using a surface curing agent (SCA) often results in the CD growth due to the "positive" interaction between the first and second resists. A thermal curing process using a thermal cure resist (TCR) often results in the CD loss due to the volumetric shrinkage of the L1 patterns during the L2 process. By combining SCA and TCR concepts, we developed a simple "hybrid" curing system which offers precise control of the L1 CD after double patterning. This hybrid curing system involves thermal curing followed by a liquid rinse process using a double patterning primer (DPP). DPP is an aqueous solution formulated with SCA components and enhances "positive" interaction between L1 and L2 patterns. While CD loss of 5~6nm is observed without DPP treatment, ~11nm CD growth was observed with TCR after DPP treatment. The L1 CD after double patterning was precisely controllable by post-priming bake process with the rate of -0.3nm/°C in the temperature ranging from 120 ~ 150°C. Taking advantage of the CD growth with DPP treatment, we further developed three different advanced patterning schemes: 1. "Shrink Process Assisted by Double Exposure" (SPADE I), 2. "Space Patterning Assisted by Double Exposure" (SPADE II), and 3. "Sidewall Patterning Assisted by Double Exposure" (SPADE III). Using SPADE I, contact hole CD was reduced by 10~30nm and excellent through pitch performance was observed. SPADE I can also improve LER/LWR when used in the formation of smaller trenches. SPADE II was developed for self-aligned pitch splitting of contact holes and SPADE III was developed for self-aligned pitch splitting of lines. In this paper, the use of DPP in various SPADE technologies is described and its potential in the advanced patterning schemes is discussed.

Proceedings Article | 1 April 2009 Paper

Materials for single-etch double patterning process: surface curing agent and thermal cure resist

Ken Spizuoco, Young Bae, Julia Simon, Thomas Cardolaccia, Michael Reilly, Stéphanie Gaurigan, Peter Trefonas, Amandine Pikon, Gary Zhang, George Barclay, John McDermott, Yi Liu, Lori Joesten

Proceedings Volume 7273, 727306 (2009) https://doi.org/10.1117/12.814274

KEYWORDS: Double patterning technology, Photoresist processing, Image processing, Semiconducting wafers, Lithography, Photoresist materials, Cadmium, Metrology, Electron beam lithography, Coating

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Proceedings Article | 14 May 2004 Paper

Influence of backbone chemistry on the post-exposure bake temperature sensitivity of 193-nm photoresists

Teruaki Ogawa, Cheng Bai Xu, Jason DeSisto, Tracy Lindsay, Robert Kavanagh, George Orsula, Tsutomu Tanaka, Tatum Kobayashi, Young Bae, Marie Hellion

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537451

KEYWORDS: Polymers, Photoresist materials, Chemistry, Lithography, Monochromatic aberrations, Semiconducting wafers, Silicon, Temperature metrology, Line edge roughness, Photoresist processing

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Proceedings Article | 12 June 2003 Paper

Mechanistic understanding of post-etch roughness in 193-nm photoresists

Nick Pugliano, Patrick Bolton, James Thackeray, Young Bae, George Barclay, Tatum Kobayashi, Robert Kavanagh, Tim Adams, Lujia Bu

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.483761

KEYWORDS: Etching, Photoresist materials, Oxides, Monochromatic aberrations, Polymers, Resistance, Atomic force microscopy, Chemical analysis, Lithography, Spatial light modulators

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Proceedings Article | 12 June 2003 Paper

Methods to achieve sub-100-nm contact hole lithography

Takafumi Kanno, Young Bae, Gerd Pohlers, Robert Kavanagh, Joseph Mattia, Tracy Lindsay, Subbareddy Kanagasabapathy, George Barclay

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485173

KEYWORDS: Photoresist materials, Polymers, Lithography, Photomasks, 193nm lithography, Phase shifts, Etching, Photoresist developing, Resistance, Silicon

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Proceedings Article | 24 July 2002 Paper

Fluorinated dissolution inhibitors for 157-nm lithography

Alyssandrea Hamad, Xiang-Qian Liu, Christopher Ober, Gary Dabbagh, Young Bae, Francis Houlihan, Anthony Novembre

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474245

KEYWORDS: Polymers, FT-IR spectroscopy, Absorbance, Photoresist materials, Lithography, Polymethylmethacrylate, Polymer thin films, Distributed interactive simulations, Absorption, Silicon

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Proceedings Article | 24 July 2002 Paper

Highly transparent resist platforms for 157-nm microlithography: an update

Katsuji Douki, Daniel Miller, Paul Zimmerman, Will Conley, Young-Je Kwark, Christopher Ober, Young Bae, Xiang-Qian Liu, Vaishali Vohra

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474169

KEYWORDS: Polymers, Fluorine, Transparency, Polymerization, Etching, Lithography, Resistance, Absorbance, Scanning electron microscopy, Photoresist materials

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Proceedings Article | 23 June 2000 Paper

Design strategies for 157-nm single-layer photoresists: lithographic evaluation of a poly(A-trifluoromethyl vinyl alcohol) copolymer

Alyssandrea Hamad, Gina Weibel, Young Bae, Christopher Ober, Dirk Schmaljohann

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388297

KEYWORDS: Polymers, Lithography, Photoresist materials, Standards development, Photoresist developing, Absorption, Transparency, Vacuum ultraviolet, Spectroscopy, Resolution enhancement technologies

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Showing 5 of 14 publications

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