Mr. Yuan Chen Profile

Yuan Chen

at Peking Univ

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 19 October 2001 Paper

Room-temperature luminescence at 1.54 um and other wavelengths from Er-doped Si-rich Si oxide

Guogang Qin, Guangzhao Ran, Yuan Chen, Borui Zhang, Yongping Qiao, Jishi Fu

Proceedings Volume 4580, (2001) https://doi.org/10.1117/12.444970

KEYWORDS: Silicon, Electroluminescence, Erbium, Diodes, Gold, Luminescence, Semiconductor lasers, Oxides, Annealing, Chlorine

Read Abstract +

SiO₂:Si:Er films were deposited on n⁺-Si substrate using the magnetron sputtering technique, and then Au/ SiO₂: Si:Er /n⁺-Si diodes were fabricated. Both Er³⁺ photoluminescence (PL) from the SiO₂: Si: Er/n⁺-Si and electroluminescence (EL) from the Au/SiO₂: Si: Er /n⁺-Si diodes were studied. The 1.54 micrometers PL intensity ratio of SiO₂: Si: Er/n⁺-Si to that of the SiO₂: Er/n⁺-Si measured under identical conditions can be as large as ~30. While the 1.54 micrometers EL intensity ratio of an Au/ SiO₂:Si:Er/n⁺-Si diode to that of an Au/SiO₂:Er/n⁺-Si diode measured under identical conditions can be as large as 6. We also deposited nanoscale (SiO₂:Er/Si(1.0~4.0nm)/SiO₂:Er) sandwich structure, in which the silicon layer between the two SiO₂:Er barriers was 1.0~4.0 nm thick with an interval of 0.2 nm, on both n⁺-Si and p-Si substrates. Each EL spectrum of the Au/nanoscale (SiO₂:Er/Si/SiO₂:Er)/n⁺-Si diodes can be fitted by three Gaussian bands with peak energies of 0.757 eV (1.64 micrometers ), 0.806 eV (1.54 micrometers ) and 0.860 eV (1.44 micrometers ), and full widths at half maximum of 0.052, 0.045 and 0.055 eV, respectively. Among the Au/nanoscale (SiO₂:Er/Si/SiO2:Er)/n⁺-Si diodes with the Si layers having various thicknesses, the EL intensities of the 1.64, 1.54 and 1.44 micrometers bands of the diode with a 1.6 nm Si layer attain maxima which are 22, 8 and 7 times larger than those of the control diode without any Si layer (Au/nanoscale SiO₂:Er/n⁺-Si), respectively.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years