This paper deals with a complete analytical
modeling and analysis of thermoelectric uncooled
infrared sensors compatible with CMOS technology.
The model put forward is based on dividing the sensor
into three zones, each one being the subject of a
thorough thermal study (conduction, convection and
radiation thermal effect). Through the analytical
thermal gradient analysis developed in each zone of
the structure (absorber, part of thermoelectric
transducer layer placed under the absorber,
thermoelectric transducer) we are able to predict the
sensitivity, detectivity and the stability power to the
sensor. Thus, such a kind of analytical approach is
worth of interest to optimize thermopile sensor design
parameters.
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