Dr. Yuansheng Ma Profile

Dr. Yuansheng Ma

Engineer

SPIE Involvement:

Author

Publications (17)

Proceedings Article | 23 March 2020

Reduction of systematic defects with machine learning from design to fab

Yuansheng Ma, Le Hong, James Word, Fan Jiang, Vlad Liubich, Liang Cao, Srividya Jayaram, Doohwan Kwak, YoungChang Kim, Germain Fenger, Ananthan Raghunathan, Joerg Mellmann

Proc. SPIE. 11329, Advanced Etch Technology for Nanopatterning IX

KEYWORDS: Data modeling, Etching, Inspection, Neural networks, Photomasks, Machine learning, Optical proximity correction, Semiconducting wafers, Process modeling

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Proceedings Article | 20 March 2019

Machine learning based wafer defect detection

Yuansheng Ma, Feng Wang, Qian Xie, Le Hong, Joerg Mellmann, Yuyang Sun, Shao Wen Gao, Sonal Singh, Panneerselvam Venkatachalam, James Word

Proc. SPIE. 10962, Design-Process-Technology Co-optimization for Manufacturability XIII

KEYWORDS: Wafer-level optics, Defect detection, Data modeling, Feature extraction, Machine learning, Optical proximity correction, High volume manufacturing, Semiconducting wafers, Optics manufacturing, Statistical modeling

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Proceedings Article | 28 March 2018

Combinational optical rule check on hotspot detection

Alexander Wei, Shaowen Gao, Yuansheng Ma, Shumay Shang, Yuyang Sun, Rui Wu, Lianghong Yin, Hongxin Zhang

Proc. SPIE. 10588, Design-Process-Technology Co-optimization for Manufacturability XII

KEYWORDS: Data modeling, Calibration, Inspection, Finite element methods, Bridges, Photomasks, Optical proximity correction, Semiconducting wafers, Failure analysis, Optics manufacturing

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SPIE Journal Paper | 23 March 2018

Model-based guiding pattern synthesis for robust assembly of contact layers using directed self-assembly

Joydeep Mitra, Andres Torres, Yuansheng Ma, David Pan

JM3 Vol. 17 Issue 01

KEYWORDS: Directed self assembly, Connectors, Global Positioning System, Curium, Model-based design, Detection and tracking algorithms, Calibration, Monte Carlo methods, Data modeling, Failure analysis

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Proceedings Article | 20 March 2018

Model-assisted template extraction SRAF application to contact holes patterns in high-end flash memory device fabrication

Ahmed Seoud, Juhwan Kim, Yuansheng Ma, Srividya Jayaram, Le Hong, Gyu-Yeol Chae, Jeong-Woo Lee, Dae-Jin Park, Hyoung-Soon Yune, Se-Young Oh, Chan-Ha Park

Proc. SPIE. 10587, Optical Microlithography XXXI

KEYWORDS: Lithography, Optical lithography, Optical proximity correction, SRAF

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Proceedings Article | 30 March 2017

Design technology co-optimization (DTCO) study on self-aligned-via (SAV) with Lamella DSA for sub-7 nm technology

Yuansheng Ma, Jongwook Kye, Gurdaman Khaira, Le Hong, James Word, Yuyang Sun, Joydeep Mitra, J. Andres Torres, Germain Fenger, Harry Levinson

Proc. SPIE. 10148, Design-Process-Technology Co-optimization for Manufacturability XI

KEYWORDS: Logic, Optical lithography, Visualization, Etching, Metals, Error analysis, Manufacturing, Monte Carlo methods, Solids, Photomasks, Directed self assembly, Optical proximity correction, Resolution enhancement technologies

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Proceedings Article | 21 March 2017

Model-based guiding pattern synthesis for on-target and robust assembly of via and contact layers using DSA

Joydeep Mitra, Andres Torres, Yuansheng Ma, David Pan

Proc. SPIE. 10144, Emerging Patterning Technologies

KEYWORDS: Lithography, Optical lithography, Detection and tracking algorithms, Calibration, Printing, Monte Carlo methods, Photomasks, Directed self assembly, Connectors, Optimization (mathematics), Model-based design, Resolution enhancement technologies

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Proceedings Article | 21 March 2017

Overview and development of EDA tools for integration of DSA into patterning solutions

J. Andres Torres, Germain Fenger, Daman Khaira, Yuansheng Ma, Yuri Granik, Chris Kapral, Joydeep Mitra, Polina Krasnova, Dehia Ait-Ferhat

Proc. SPIE. 10144, Emerging Patterning Technologies

KEYWORDS: Lithography, Optical lithography, Data modeling, Visualization, Polymers, Manufacturing, Inspection, Design for manufacturing, Photomasks, Directed self assembly, Epitaxy, Electronic design automation, Systems modeling

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Directed Self-Assembly is the method by which a self-assembly polymer is forced to follow a desired geometry defined or influenced by a guiding pattern. Such guiding pattern uses surface potentials, confinement or both to achieve polymer configurations that result in circuit-relevant topologies, which can be patterned onto a substrate.

Chemo, and grapho epitaxy of lines and space structures are now routinely inspected at full wafer level to understand the defectivity limits of the materials and their maximum resolution. In the same manner, there is a deeper understanding about the formation of cylinders using grapho-epitaxy processes. Academia has also contributed by developing methods that help reduce the number of masks in advanced nodes by “combining” DSA-compatible groups, thus reducing the total cost of the process.

From the point of view of EDA, new tools are required when a technology is adopted, and most technologies are adopted when they show a clear cost-benefit over alternative techniques. In addition, years of EDA development have led to the creation of very flexible toolkits that permit rapid prototyping and evaluation of new process alternatives. With the development of high-chi materials, and by moving away of the well characterized PS-PMMA systems, as well as novel integrations in the substrates that work in tandem with diblock copolymer systems, it is necessary to assess any new requirements that may or may not need custom tools to support such processes.

Hybrid DSA processes (which contain both chemo and grapho elements), are currently being investigated as possible contenders for sub-5nm process techniques. Because such processes permit the re-distribution of discontinuities in the regular arrays between the substrate and a cut operation, they have the potential to extend the number of applications for DSA.

This paper illustrates the reason as to why some DSA processes can be supported by existing rules and technology, while other processes require the development of highly customized correction tools and models. It also illustrates how developing DSA cannot be done in isolation, and it requires the full collaboration of EDA, Material’s suppliers, Manufacturing equipment, Metrology, and electronic manufacturers.

SPIE Journal Paper | 29 September 2016

Directed self-assembly compliant flow with immersion lithography: from material to design and patterning

Yuansheng Ma, Yan Wang, James Word, Junjiang Lei, Joydeep Mitra, Juan Andres Torres, Le Hong, Germain Fenger, Daman Khaira, Moshe Preil, Jongwook Kye, Harry Levinson

JM3 Vol. 15 Issue 03

KEYWORDS: Directed self assembly, Lens design, Optical lithography, Immersion lithography, Photomasks, Neck, Lithography, Critical dimension metrology, Visualization, Optical proximity correction

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Proceedings Article | 22 March 2016

Directed Self Assembly (DSA) compliant flow with immersion lithography: from material to design and patterning

Yuansheng Ma, Yan Wang, James Word, Junjiang Lei, Joydeep Mitra, J. Andres Torres, Le Hong, Germain Fenger, Daman Khaira, Moshe Preil, Lei Yuan, Jongwook Kye, Harry Levinson

Proc. SPIE. 9777, Alternative Lithographic Technologies VIII

KEYWORDS: Code division multiplexing, Neck, Lithography, Optical lithography, Modulation, Visualization, Ions, Lens design, Optical resolution, Photomasks, Extreme ultraviolet, Directed self assembly, Immersion lithography, Neodymium, Semiconducting wafers

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SPIE Journal Paper | 11 September 2015

Directed self-assembly graphoepitaxy template generation with immersion lithography

Yuansheng Ma, Junjiang Lei, J. Andres-Torres, Le Hong, James Word, Germain Fenger, Alexander Tritchkov, George Lippincott, Rachit Gupta, Neal Lafferty, Yuan He, Joost Bekaert, Geert Vanderberghe

JM3 Vol. 14 Issue 03

KEYWORDS: Dysprosium, Photomasks, Immersion lithography, Source mask optimization, Optical proximity correction, Printing, Optical lithography, Visualization, Lens design, Directed self assembly

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Proceedings Article | 19 March 2015

Directed self-assembly (DSA) grapho-epitaxy template generation with immersion lithography

Yuansheng Ma, Junjiang Lei, J. Torres, Le Hong, James Word, Germain Fenger, Alexander Tritchkov, George Lippincott, Rachit Gupta, Neal Lafferty, Yuan He, Joost Bekaert, Geert Vanderberghe

Proc. SPIE. 9423, Alternative Lithographic Technologies VII

KEYWORDS: Optical lithography, Visualization, Transmission electron microscopy, Printing, Photomasks, Dysprosium, Directed self assembly, Source mask optimization, Optical proximity correction, Neodymium

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Proceedings Article | 18 March 2015

Incorporating DSA in multipatterning semiconductor manufacturing technologies

Yasmine Badr, J. Torres, Yuansheng Ma, Joydeep Mitra, Puneet Gupta

Proc. SPIE. 9427, Design-Process-Technology Co-optimization for Manufacturability IX

KEYWORDS: Lithography, Electron beam lithography, Optical lithography, Visualization, Annealing, Manufacturing, Photomasks, Directed self assembly, Semiconductor manufacturing, Optics manufacturing

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Proceedings Article | 16 March 2015

Directed self assembly on resist-limited guiding patterns for hole grapho-epitaxy: Can DSA help lower EUV's source power requirements?

J. Torres, Fan Jiang, Yuansheng Ma, Joerg Mellman, Kafai Lai, Ananthan Raghunathan, Yongan Xu, Chi-Chun Liu, Cheng Chi

Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI

KEYWORDS: Lithography, Polymethylmethacrylate, Visualization, Polymers, Monte Carlo methods, Extreme ultraviolet, Directed self assembly, Extreme ultraviolet lithography, Picosecond phenomena, Line edge roughness

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Proceedings Article | 17 October 2014

Challenges and opportunities in applying grapho-epitaxy DSA lithography to metal cut and contact/via applications

Yuansheng Ma, J. Andres Torres, Germain Fenger, Yuri Granik, Julien Ryckaert, Geert Vanderberghe, Joost Bekaert, James Word

Proc. SPIE. 9231, 30th European Mask and Lithography Conference

KEYWORDS: Lithography, Optical lithography, Modulation, Metals, Phase shift keying, Printing, Monte Carlo methods, Photomasks, Directed self assembly, Optical proximity correction

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Directed self assembly has become a very attractive technology for Fin and contact/via applications. Some of the issues related to pattern placement error, defectivity rates and process integration are actively being addressed by the industry and have not faced significant roadblocks for contact-hole applications. While many DSA applications have been proposed, deploying DSA for Fin structures competes in cost and variability control with SADP techniques. Given the 1D nature of find structures, it is difficult to control fin placement with accuracy better than 4nm 3 sigma. In addition, a second patterning step is needed to remove the un-wanted sections of the grating and leaving behind only the required fin structures, therefore limiting its adoption. On the other hand, DSA applied to contact/via holes has demonstrated low defectivity rates due to improved polymerization and processing techniques, as well as an adequate control to reduce the placement error due to thermal fluctuations during the annealing and cylinder formation process. For that reason, the results from contact/via layers can extend to the metal cut layer printing with DSA grapho-epitaxy. In this paper, we show that DSA provides a promising cost-effective solution for the technology scaling by reducing mask number from N to N-1. It is shown that pxOPC may provide better guiding patterns than the conventional one. In addition, the practical grouping rules for DSA should avoid 2D grouping, avoid putting more than 3 features in a group with different pitches, and avoid grouping features with different sizes. Our recommendations to designers for DSA technology are the following: if the design is to be decomposed with 2 or more DSA masks, then the design rules should be set up in this way: first the minimum pitch is better to be on DSA material’s own natural pitch; second, for each DSA mask, singletons and bar-like grouping shapes with DSA’s natural pitch should be used as much as possible.

Proceedings Article | 17 October 2014

Compact model experimental validation for grapho-epitaxy hole processes and its impact in mask making tolerances

Germain Fenger, J. Andres Torres, Yuansheng Ma, Yuri Granik, Polina Krasnova, Antoine Fouquet, Jérôme Belledent, Ahmed Gharbi, Raluca Tiron

Proc. SPIE. 9231, 30th European Mask and Lithography Conference

KEYWORDS: Data modeling, Calibration, Scanning electron microscopy, Photomasks, Directed self assembly, Optical proximity correction, Mask making, Neodymium, Semiconducting wafers, Tolerancing

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Proceedings Article | 8 October 2014

Calibration and application of a DSA Compact model for graphoepitaxy hole processes using contour-based metrology

Germain Fenger, Andrew Burbine, J. Andres Torres, Yuansheng Ma, Yuri Granik, Polina Krasnova, Geert Vandenberghe, Roel Gronheid, Joost Bekaert

Proc. SPIE. 9235, Photomask Technology 2014

KEYWORDS: Metrology, Data modeling, Calibration, Ions, Cements, Monte Carlo methods, Photomasks, Directed self assembly, Double patterning technology, Neodymium

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Significant interest from the integrated circuit (IC) industry has been placed on directed selfassembly (DSA) for sub 10nm nodes. DSA is being considered as a cost reduction complementary process to multiple patterning (MP) and an enabler of new technology nodes. However, to realize the potential of this technology, it is essential to look holistically at the necessary infrastructure from the point of view of materials, hardware, software, process integration and design methodologies which enable its deployment in large volume manufacturing. One key aspect in enabling DSA processes is the ability to mirror functionality of full chip mask synthesis and verification methods of existing tools used in production. One of those critical components is the ability to accurately model the placement of the target phases in the DSA process with a given mask shape, as well as determining the conditions at which unwanted phase transitions start to occur. Self-consistent field theory and Monte Carlo1 simulators have the capability to probe and explore the mechanisms driving the different phases of a diblock copolymer system. While such methods are appropriate to study the nature of the self-assembly process, they are computationally expensive and they cannot be used to perform mask synthesis operations nor full chip verification. The nature of a compact model is to make a series of approximations allowing a simpler description of the problem in a way that the phenomena of interest can be sufficiently captured even if it is at the expense of its generality. In this case we focus our effort in establishing the minimum set of conditions that a compact model for the manufacture of contact holes using a grapho epitaxy process for a PS-PMMA diblock copolymer system needs. The processes uses etched short trenches as guiding patterns in which the vertical DSA cylinders are formed. By focusing in the phase of interest (i.e., cylinder forming conditions), it is possible to reformulate the problem in a phenomenological formulation which accounts for the interaction among cylinders, the volume fraction of the respective co-polymers and the interaction with the confinement walls. As such, a 2D approximation to the 3D environment can be applied too simplify thhe representation of the DSA process. This enables thee use of a 2D contour for compact model training and verification. Further simplification is not recommended due to the nature of the grapho-epitaxy guiding patterns, where a simple CD measurement is not sufficient to capture the 2D environment of post routed contact patterns for sub 10nm nodes. In this paper, we will study the application of the DSA compact model to a via layer of imec’s 7nm technology node standard cells. ArF immersion lithography will be used to pattern the guides, and the layout will be DSA compliant to determine the mask complexity as well as the sensitivity of the solution to mask biases for the contact layer.

Showing 5 of 17 publications

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