<p>Photoelectric functional material WS<sub>2</sub> thin film on SiC substrate was synthesized. Both 15 and 150 nm thickness of WS<sub>2</sub> film were deposited on an n-doped SiC substrate (7.37 × 10<sup>19</sup> cm<sup> − 3</sup>) by pulsed laser deposition method. Optical properties of the WS<sub>2</sub> / SiC material were discovered. (I) a photovoltaic effect: (1) there is a cutoff wavelength λ<sub>c</sub> (661 nm), which means the wavelength of an incident monochromatic light must be less than λ<sub>c</sub> in order to have the photovoltaic effect; (2) the incident light must be polarized. (3) It was found that the maximum open circuit voltage output is 6.3 V in a condition of 40 mW @ 532 nm. (II) Wavelength blueshift: when a laser of 532 nm is used in the experiment to incident perpendicularly through the thin layer WS<sub>2</sub> / SiC film stack, which is driven by an external electric field, it is found that the 532-nm photons are blueshifted 1.33 nm under a 30 V (DC) voltage. We also find that the blueshift of the laser wavelength is tunable with the applied voltage. Inverse Compton scattering of the photon by both electron and hole is used to explain this blueshift, the consistency of experimental results and the theoretical calculation for the wavelength blueshift was found.</p>
An optical material WS<sub>2</sub> thin film on SiC substrate was synthesized. Both 15nm and 150nm thickness of WS<sup>2</sup> films were deposited on a n-doped SiC substrate by pulsed laser deposition (PLD) method. Tungsten disulfide films were superimposed face to face, and silicon carbide was used as the electrode to apply an electric field ranging from 0V/nm to 0.18v /nm. The experimental results showed that band gap were continuously tunable from 2.017ev to 1.507ev. The first principle calculation by using Quantum Espresso also was performed to simulate the band gap change with the increase of an external electric field. It is found that the band gap of WS2/SiC film changes from 1.973ev to 1.488ev as an electric field applied perpendicularly to the film ranging from 0V/nm to 0.18v /nm. The consistency of experimental results and the first principle calculation was found.