The Micro-processing & Nano-technology Laboratory at the Institute of Microelectronics, Chinese Academy of Sciences (CAS), is equipped with a GCA 3600F PG&3696, a JBX 6AII & JBX 5000LS EB, and an ETEC MEBES 4700S EB. For a long time we have been engaged in the research and manufacture on Optical Resolution Enhancement Technology (RET) and E-Beam Direct Writing Technology. In this paper the following technologies will be described: PSM, OPC EBDW,EPC,Match & Mixed Lithography technology. Through the application of RET in optical lithography system, we completed the 0.2 um pattern with the g line and I line light source, which is the necessary preparation for 100nm node with 193nm light source. By means of match & mixed lithography and nanofabrication technology, 20nm-50nm gate CMOS transistor and 100nm gate HEMT are successfully developed.