Dr. Yun Bai Profile

Dr. Yun Bai

at Shanghai Institute of Technical Physics CAS

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Proceedings Article | 19 November 2007 Paper

Back-illuminated GaN/AIGaN visible-blind photodiodes

Liang Chen, Jun Chen, Yun Bai, Liwei Guo, Yan Zhang, Xiangyang Li, Haimei Gong

Proceedings Volume 6724, 67240I (2007) https://doi.org/10.1117/12.782514

KEYWORDS: Photodiodes, Ultraviolet radiation, Ultraviolet detectors, Sensors, Heterojunctions, Gallium nitride, X-ray diffraction, Back illuminated sensors, Aluminum, Gallium

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In recent years, AlGaN semiconductor alloys, with a direct bandgap tunable between 3.4eV and 6.2eV, become the most suitable material for fabricating UV detectors. In this paper, a backside-illuminated visible-blind UV detector based on a GaN/AlGaN p-i-n heterostructure has been successfully fabricated and tested. The p-i-n photodiode structure consists of a 0.7um n-type Al_0.33Ga_0.67N:Si layer grown by metal-organic chemical vapor deposition (MOCVD) onto a low temperature AlN buffer layer on a polished sapphire substrate. On the top of this layer there is a 0.18um undoped GaN active layer and a 0.15um p-type GaN:Mg top layer. Square mesas of area A=1.70×10^-3cm² were obtained by inductively coupled plasma etching using BCl₃, Ar and Cl₂. Standard photolithographic and metallization procedures were also employed to fabricate the devices. The visible blind photodiode exhibits a narrow UV spectral responsibility band peaked at 360nm, with maximum responsibility R=0.21A/W, corresponding to an internal quantum efficiency of 82%. R₀A values up to 2.64×10⁸Ω•cm² were obtained, corresponding to D*=2.65×10¹³ cmHz^1/2W^-1 at 360nm. The leakage current at zero bias is 5.20×10^-13A. We also examined GaN/AlGaN epitaxial layers by high resolution X-ray diffraction (HRXRD). The rocking curve indicates the multiple layers including p-type layer are in good state, which indicates that the crystalline quality of films is the key of device performances.

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