Dr. Yun Xu Profile

Dr. Yun Xu

at Institute of Semiconductors CAS

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Author

Publications (14)

PROCEEDINGS ARTICLE | January 5, 2017

Realization of circularly polarized beam based on plasmonic metasurface

Proc. SPIE. 10244, International Conference on Optoelectronics and Microelectronics Technology and Application

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PROCEEDINGS ARTICLE | January 5, 2017

Radiation characteristics of photoconductive antennas based on low-temperature grown GaAs

Proc. SPIE. 10244, International Conference on Optoelectronics and Microelectronics Technology and Application

KEYWORDS: Plasmonics, Gallium arsenide, Terahertz radiation, Antennas

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PROCEEDINGS ARTICLE | October 15, 2015

High-power and low-loss room temperature operation of 2.4μm GaInAsSb/AlGaAsSb type-I strained quantum-well laser diodes

Proc. SPIE. 9671, AOPC 2015: Advances in Laser Technology and Applications

KEYWORDS: Quantum wells, Continuous wave operation, Cladding, High power lasers, Gallium antimonide, Semiconductor lasers, Laser damage threshold, Semiconducting wafers, Internal quantum efficiency, Molecular beam epitaxy

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PROCEEDINGS ARTICLE | April 13, 2015

Backscattering metal gratings in QWIPs to increase the long wavelength infrared light absorption

Proc. SPIE. 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II

KEYWORDS: Infrared detectors, Long wavelength infrared, Gold, Polarization, Backscatter, Metals, Gallium arsenide, Infrared radiation, Quantum well infrared photodetectors, Absorption

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PROCEEDINGS ARTICLE | November 21, 2014

MBE growth and fabrication of 2.Xum InGa(As)Sb/AlGaAsSb laser

Proc. SPIE. 9267, Semiconductor Lasers and Applications VI

KEYWORDS: Semiconductors, Tunable lasers, Quantum wells, Continuous wave operation, Waveguides, Cladding, Etching, Gallium antimonide, Semiconductor lasers, Laser countermeasures

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PROCEEDINGS ARTICLE | November 20, 2014

Polarization-independent broadband absorption enhancement of thin-film InGaAs photodetector

Proc. SPIE. 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications

KEYWORDS: Signal to noise ratio, Thin films, Photodetectors, Indium gallium arsenide, Scattering, Light scattering, Mie scattering, Waveguide modes, Thin film devices, Absorption

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PROCEEDINGS ARTICLE | August 23, 2013

Absorption enhancement of In0.53Ga0.47As photodetector with rear plasmonic nanostructure

Proc. SPIE. 8911, International Symposium on Photoelectronic Detection and Imaging 2013: Micro/Nano Optical Imaging Technologies and Applications

KEYWORDS: Gold, Photodetectors, Plasmonics, Nanostructures, Indium gallium arsenide, Surface plasmon polaritons, Finite-difference time-domain method, Sensors, Magnetism, Absorption

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PROCEEDINGS ARTICLE | November 18, 2008

Highly stable white light from ultraviolet laser diode

Proc. SPIE. 7135, Optoelectronic Materials and Devices III

KEYWORDS: Near ultraviolet, Light sources, Light emitting diodes, Ultraviolet radiation, Semiconductor lasers, Indium gallium nitride, Luminous efficacy, Temperature metrology, Light, Blue light emitting diodes

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SPIE Journal Paper | March 1, 2006

High-power AlGaInP laser diodes with current-injection-free region near the laser facet

Xu, Yun , Li, Yuzhang , Gan, Qiaoqiang , Cao, Qing , Song, Guofeng , Guo, Liang , Chen, Lianghui

OE Vol. 45 Issue 03

KEYWORDS: Aluminium gallium indium phosphide, Semiconductor lasers, High power lasers, Optical engineering, Chemical vapor deposition, Metalorganic chemical vapor deposition, Quantum wells, Cladding, Continuous wave operation, Gallium

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PROCEEDINGS ARTICLE | December 3, 2005

Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method

Proc. SPIE. 6020, Optoelectronic Materials and Devices for Optical Communications

KEYWORDS: Aluminium gallium indium phosphide, Cladding, Ions, Doping, Mass spectrometry, Semiconductor lasers, Chemical analysis, Laser damage threshold, Metalorganic chemical vapor deposition, Temperature metrology

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PROCEEDINGS ARTICLE | January 31, 2005

Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

Proc. SPIE. 5624, Semiconductor and Organic Optoelectronic Materials and Devices

KEYWORDS: Semiconductors, Quantum wells, Physics, Numerical simulations, Finite difference methods, Optoelectronic devices, Epitaxy, Digital video discs, Gallium, Indium gallium phosphide

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PROCEEDINGS ARTICLE | January 31, 2005

Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells

Proc. SPIE. 5624, Semiconductor and Organic Optoelectronic Materials and Devices

KEYWORDS: Semiconductors, Quantum wells, Chemical species, Interfaces, Diffusion, Optoelectronic devices, Solids, Aluminum, Gallium, Indium gallium phosphide

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PROCEEDINGS ARTICLE | December 8, 2004

Liquid nitrogen flowrate alarm system for MBE

Proc. SPIE. 5774, Fifth International Conference on Thin Film Physics and Applications

KEYWORDS: Semiconductors, Lithium, Sun, Molecules, Nickel, Nitrogen, Temperature sensors, Software development, Temperature metrology, Liquids

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PROCEEDINGS ARTICLE | May 12, 2004

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Proc. SPIE. 5280, Materials, Active Devices, and Optical Amplifiers

KEYWORDS: Refractive index, Aluminium gallium indium phosphide, Waveguides, Cladding, Semiconductor lasers, Finite difference methods, Aluminum, Epitaxy, Gallium, Near field optics

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Showing 5 of 14 publications

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