Staggered quantum wells (QWs) structures are numerically studied to reduce the influence of the efficiency-droop effect
on the InGaN-based green light-emitting diode (LED). The location of high In-content InGaN layer in staggered QWs
considerably affects the distribution of the electrostatic-field of an LED. When the high In-content InGaN layer is
suitably located in the staggered QWs, the localized electrostatic-field with high intensity increases the transport
efficiency of injected holes across the active region, improving the overall radiative efficiency of the LED. Most
importantly, as accumulation of injected holes in the last QW is relieved, the Auger recombination process is quenched,
suppressing the efficiency-droop in the LED. Theoretically, the incorporation of the staggered InGaN QWs in the green
LED (λ = 530nm) can ensure an extremely low efficiency droop of 11.3%.