One of the major challenges for process control is wafer to wafer and lot to lot variation, for the 14nm technology node and beyond. Most of advanced process control (APC) is based on product groups, and different product groups exhibit different amounts of parameter tuning. Because lithography pattern density varies between product groups, it is difficult or impossible to share APC threads between different product groups. This paper will introduce a new method to optimize current APC into a dynamic control. With dynamic control, product groups having different pattern density will have a similar amount of parameter tuning and all product groups could share APC feedback. This paper also shows the simulation results and predicts CD sigma with dynamic control.