Dependence of the easy magnetization axis switch and domain structure in Fe films grown on GaAs(100) substrates on the growth temperature TS and deposition rate υ was investigated. The easy magnetization axis direction was determined from ferromagnetic resonance measurements in tangentially magnetized Fe films. It was found for films grown at substrate temperature TS ≤;140°C that with decreasing films thickness t smaller some critical thickness t* the easy magnetization axis direction switches from  to  crystallographic axis while for films grown at substrates temperatures Ts>140°C the easy magnetization direction was along  axis at decreasing the film’s thickness down to 10 Å. The critical thickness t* of “switched” film nonmonotonically depends on the deposition rate and was determined at t* ≈ 21, 15 and 28 Å for deposition rates υ ≈1.4 ; 3 and 4 Å/min, respectively. Domain structures in FeGaAs(100) films are discussed.
The measurements of ferromagnetic resonance spectra of tangentially magnetized arrays of micron size rectangular particles of permalloy produced by electron-beam lithography are reported. In contrast to continuous films, the spectra of arrays include a number of additional resonance peaks associated with spin-wave modes in the particles. The number of the peaks and their position depends on the angle between the direction of the bias magnetic field and the array axis. The magnetic structure of the particles was investigated using magnetic force microscopy. Magnetization reversal processes of the array were investigated using magneto-optic Kerr effect.
The structure and magnetic properties of thin nickel films grown by direct current magnetron sputtering on GaAs(100) and Si(111) substrates were studied by means of ferromagnetic resonance (FMR) method, magnetooptic Kerr effect (MOKE), atomic force microscopy (AFM) and X-ray diffraction (XRD). Dependence of the properties on substrate location inside flame zone during deposition was shown. Possibility of changing of the films' texture by varying of potential of the substrate during deposition was shown.