We report on InP-based high power modified uni-traveling carrier (MUTC) photodiodes heterogeneously integrated on silicon on diamond (SOD) waveguides. Typical dark currents of MUTC photodiodes on SOD waveguides are 20 nA at - 5 V bias voltage. A 50-μm long photodiode has an internal responsivity of 1.07 A/W at 1550 nm wavelength. The bandwidths of photodiodes with active areas of 14×25 μm2, 14×50 μm2, 14×100 μm2 and 14×150 μm2 are 22 GHz, 16 GHz, 10 GHz and 7 GHz, respectively. The maximum output RF powers of 14×100 μm2 photodiodes are 13 dBm, 14.4 dBm and 15.3 dBm at 10 GHz, respectively. The maximum DC dissipated power is 0.67 W. To our knowledge, this is the first demonstration of III-V photodiodes integrated on SOD waveguides.
Recently, microwave photonic techniques have emerged to address the challenges that microwave systems face under high-frequency or wideband conditions. To a large extent, the performance of microwave photonic systems depends on the performance of individual optoelectronics devices, such as high power photodiodes. Here, we report a fullypackaged photodetector module based on InGaAs/InP modified uni-traveling carrier (MUTC) photodiode. The modules demonstrated a 3-dB bandwidth up to 50GHz and a record-high output power of 14.0 dBm at 50GHz.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.