This paper describes a demonstration of a high power 888 nm end-pumped Nd:YVO4 picosecond regenerative amplifier operated at high repetition rate. By utilizing an all-fiber mode-locking picosecond laser as seed source and 888 nm continuous wave (CW) as pumping source, we obtained regenerative amplified output at 1064.07 nm with spectrum width 0.16 nm, pulse width of 38 ps, maximum power of 21 W, and the repetition rate is continuously adjustable from 300 to 500 kHz. The regenerative amplifier has high power stability and high compact structure.
Detail studies on the 888 nm laser diode (LD) pumped Nd:YVO4 crystal was reported to reduce the absorption coefficient
and improve thermal performance of the laser, which could generate high power mode-locked pulses output easily. The
mode-locking operation was induced by a semiconductor saturable absorber mirror (SESAM). When pumping power is
65 W, the maximum output power of 20 W is obtained at repetition rate of 63.5 MHz with the optical-optical conversion
efficiency of 30.8% and pulse width of 45 ps.
A third-harmonic-generation picosecond pulse with several millijoules per pulse at 355 nm has been achieved by nonlinear optical materials LiB 3 O 5 (LBO). The single pulse energy of third harmonic was up to 2 mJ at the repetition rate of 1 kHz. The conversion efficiency was up to 33.3% from 1064 to 355 nm with the M 2 factor of 2.4. The system is based on a Nd:YAG regenerative amplifier with a simple double-pass post-amplifier.
We present a high compact structure laser diode (LD) side-pumped all-solid-state Q-switched master oscillator power amplifier (MOPA) laser system with high beam quality. Bidirectional voltage-supplied Q-switched and MOPA technologies were introduced in the design. An in-center wavelength of 1064 nm with pulse width adjustability from 5 to 18 ns was obtained at the repetition rate of 500 Hz. Through multistage Nd∶YAG amplifiers at the pulse width of 6 ns, the oscillator was scaled up to 145 W and the corresponding peak power reached 48.3 MW with single pulse energy fluctuation less than 0.45% in 1 h operation.
An double Nd:YAG regenerative amplification picosecond pulse laser is demonstrated under the semiconductor saturable
absorption mirror(SESAM) mode-locking technology and regenerative amplification technology, using BBO crystal as
PC electro-optic crystal. The laser obtained is 20.71ps pulse width at 10 KHz repetition rate, and the energy power is up
to 4W which is much larger than the system without pre-amplification. This result will lay a foundation for the following
We report on a picosecond pulse laser produced by grating stretcher and regenerative amplifier. By designing the
experimental setup and numerical simulation, mode-locking output pulse energy of 7.5mJ with a repetition rate of 1KHz
and a pulse width of 106.4ps stretched from 8.5ps is obtained at 1064nm. The results indicated that this system has laid a
good foundation for the multichannel amplification to get higher pulse energy.
A micro processing used LD end-pumped Nd:YVO4 all solid-state picosecond pulse laser was demonstrated under the
semiconductor saturable absorption mirror(SESAM) mode-locking technology and regeneration amplifier technology, by
using BBO crystal as electro-optic crystal and diode-side-pumped Nd:YAG. 1064nm laser was obtained with 1.47mJ
single pulse energy, 15ps pulse width at 1 kHz repetition rate and the pulse energy fluctuation was less than 0.6% in 3
hours operation. Finally, through the galvanometric we got the beam focused, realizing the steel plate processing which
thickness was 0.5mm and the aperture radius was 25.5μm.