A new method based on the lumped-element network representation of the pad-set parasitics is developed to extract the
intrinsic drain current noise source and gate resistance from raw measurement data instead of direct de-embedding. The
length dependence of BSIM noise model is also corrected using a sub-circuit in the model file. With the new method, we
can finally integrate an improved and hardware verified noise model into design kits.
We present a comprehensive study of low-frequency noise mechanisms in 210 GHz SiGe HBTs using a variety of measurement techniques, and explain a unique scaling effect. The implication of these noise mechanisms on SiGe HBT compact modeling methodologies are also discussed.
We present a comprehensive investigation of the fundamental differences in low frequency noise behavior between npn and pnp SiGe HBTs. Geometry effects on the low frequency noise are assessed, as well as the impact of interfacial oxide(IFO) thickness on pnp noise characteristics. Temperature measurements and ionizing radiation are used to probe the fundamental physics of 1/f noise in npn and pnp SiGe HBTs. The npn transistors show a stronger size dependence than the pnp transistors. The 1/f noise for pnp SiGe HBTs exhibits an exponential dependence on IFO thickness, indicating that IFO produces the main contribution. In most cases, the magnitude of the 1/f noise has quadratic dependence on the base current(IB), the only exception being for the post-radiation npn transistor biased at low base currents, which exhibits a near-linear dependence on IB. In the proton radiation experiments, the pnp devices show better radiation tolerance than the npn devices. The observed temperature dependence for both types is quiet weak, consistent a tunneling mechanism.