We present the development of SOI waveguides with low-loss (~1.5 dB/cm) single-moded guidance over an octave of frequency. Broadband single-moded guidance is needed for on-chip mid-infrared spectroscopy and this cannot be provided by conventional waveguide geometries in standard material platforms. The reported waveguides require a simple fabrication process flow and will be widely applicable to different mid-infrared wavelength bands for a variety of sensing applications. We further present a low-loss bend design (0.179 ± 0.031 dB/90°) that overcomes the inherently large bending loss of the waveguides, which is a limiting factor in the utility of the waveguides. We consider different prospective designs for the use of these waveguides in a circuit for a sensing device.
We review our recent results on modulators and detectors for the 2μm range, which may become very relevant for future communications, and on the development of mid-IR broadband devices for sensing applications. We show Mach-Zehnder and Michelson based modulators operating at data rates up to 25 Gb/s and Ge based detectors operating up to 12.5 Gb/s. For longer wavelengths relevant for sensing applications, we present broadband waveguides and splitters, waveguide integrated bolometers, and the realisation of a mid-infrared sensor.
Germanium has become a material of high interest for mid-infrared (MIR) integrated photonics due to its complementary metal-oxide-semiconductor (CMOS) compatibility and its wide transparency window covering the 2-15 μm spectral region exceeding the 4 μm and 8 μm limit of the Silicon-on-Insulator (SOI) platform and Si material respectively. Here, we present suspended germanium waveguides operating at wavelengths of 3.8 μm and 7.67 μm with propagation losses of 2.9 ± 0.2 dB/cm and 2.6 ± 0.3 dB/cm respectively.
In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelength region and we report several active and passive devices realised in these materials. We particularly focus on devices and circuits for wavelengths longer than 7 micrometers.
Group IV platforms can operate at longer wavelengths due to their low material losses. By combining graphene and Si and Ge platforms, photodetection can be achieved by using graphene’s optical properties and coplanar integration methods. Here, we presented a waveguide coupled graphene photodetector operating at a wavelength of 3.8 μm.
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