The hybridization of active and passive platforms are always the hot area of material science and experimental physics, which also attracts our attention. We demonstrate a device composes silicon photonic crystal structure and perovskite. Single mode lasing is observed at 577nm, with full width half maximum (FWHM) of 0.3nm. While a thin film of allinoganic lead-halide perovskite is spin-coated atop, under the same pump situation, there exists a sharp peak at 565nm, with FWHM of 0.4nm. At the same time, the single peak at 470nm gradually shifts towards to longer wavelength and then splits into two peaks in photoluminescence (PL) spectra. Photonic band structure is calculated by the plane-wave expansion method. We choose the bandedge modes at Γ point for laser action from the band structure. Then the device is simulated as a whole and optimized by finite element method. Our works demonstrate that the visible light can resonant in silicon material, which indicates that active optical material such as perovskite can be hybridized with integrated circuits in future.