We present Interference Assisted Lithography (IAL) as a promising and cost-effective solution for extending lithography. IAL achieves a final pattern by combining an interference exposure with a trim exposure. The implementation of IAL requires that today's 2D random layouts be converted to highly regular 1D gridded designs. We show that an IAL-friendly 6T SRAM bitcell can be designed following 1D gridded design rules and that the electrical characteristics is comparable to today's 2D design. Lithography simulations confirm that the proposed bitcell can be successfully imaged with IAL.
We demonstrated a high-intensity bowtie-shaped nano-aperture Vertical-cavity surface-emitting laser (VCSEL). A
maximum power of 188μW is achieved from a VCSEL with an 180nm bowtie aperture at a wavelength of 970nm.
Simulation shows the near-field full width at half maximum intensity spot size 20nm away from the bowtie aperture is
64×66nm<sup>2</sup>. The peak near-field intensity from the bowtie-aperture VCSEL is estimated to be as high as 47mW/μm<sup>2</sup>. This
intensity is high enough to realize near-field optical data storage and the small spot size corresponds to storage densities
up to 150Gbits/in<sup>2</sup>.
We designed and demonstrated a unique C-shaped nanoaperture (C-aperture) Vertical-Cavity Surface-Emitting Laser with an estimated maximum net power of 113 μW coming from a 70nm C-aperture. Simulation shows the near-field FWHM spot size at 30nm away from the C-aperture is 94nm and 108nm in X and Y direction. We estimate the peak near-field intensity from the C-aperture VCSEL to be as high as 13.7mW/μm<sup>2</sup>. This high intensity and small spot size is promising to realize high-density near-field optical data storage.
The dilute-nitride GaInNAs shows great promise in becoming the next choice for long-wavelength (0.9 to 1.6 μm) photodetector applications due to the ability for it to be grown lattice-matched on GaAs substrates. GaAs-based devices have several advantages over InP-based devices, such as substrate cost, convenience of processing, and optoelectronic band parameters. This paper will present results from the first high-quality thick GaInNAs films grown by solid state molecular beam epitaxy with a nitrogen plasma source and the first high efficiency photodetectors which have been fabricated from those materials. GaInNAs films up to 2 microns thick have been grown coherently on GaAs substrates. These films exhibit reasonable photoluminescence intensities at peak wavelengths of 1.22 to 1.13 μm before and after a rapid thermal anneal at a series of temperatures. PIN photodiodes with these thick GaInNAs films in the intrinsic regions show responsivity (better than 0.5 A/W at 1.064 μm), dark current (200 nA at -2 V), and signal-to-noise ratio (greater than 10<sup>5</sup>) approaching those of commercially available InGaAs/InP devices. Furthermore, it will be shown that these devices show significantly lower dark current and higher signal-to-noise ratio than similar metamorphic InGaAs/GaAs structures.