We present a single-mode, 808 nm, AlInGaAs/AlGaAs/GaAs, strained, quantum-well laser with a record low, vertical divergence-angle of 12 degrees and high slope-efficiency of 1.0 W/A. Epitaxial-up mounted
devices have operated with no measurable degradation at 150 mW, 50°C for 3500 hours.
We report results on single-mode, InAlGaAs/AlGaAs/GaAs, 915 nm, lser-diodes operating reliably at 300 mW. The graded-index, separate-confinement, strained, single quantum-well structure was grown by metal-organic chemical-vapor deposition. Carbon, rather than zinc, was used as the p-doping srouce to reduce internal loss and potential reliability issues due to the thermal diffusion of zinc. A threshold current density of 133 A/cm<sup>2</sup>, internal loss of 2.0 cm<sup>-1</sup> and internal quatnum efficiency of 93% were achieved. FOr 1500 μm long ridge waveguide lasers, a record single-mode output-power of 500mW was obtained for devices mounted epitaxial-side up onto AlN submounts using eutectic Au<sub>80</sub>Sn<sub>20</sub> solder. Ten burned-in devices have now been aged at a constant current of 450 mA at 85°C for more than 1500 hours wihtout measurable degradation.
This study examines catastrophic optical damage in failed, single-mode, 980 nm, InGaAs/GaAlAs/GaAs, ridge wave-guide laser diodes. Analysis techniques were selected for their simplicity to provide quick evaluation of material and device quality. The analysis techniques are chemical etching, optical microscopy, infrared microscopy, and scanning electron microscopy.