We report a flexible amorphous Lanthanide doped In-Zn-O (IZO) thin-film transistor (TFT) backplane on polyimide
(PI) substrate. In order to de-bond the PI film from the glass carrier easily after the flexible AMOLED process, a
special inorganic film is deposited on the glass before the PI film is coated. The TFT exhibited a field-effect
mobility of 6.97 cm2V-1 s-1, a subthreshold swing of 0.248 V dec-1, and an Ion/Ioff ratio of 5.19×107, which is
sufficient to drive the OLEDs.