The Al-free separate confinement hetero-structure (SCH) single quantum-well (SQW) lasers were grown by liquid phase epitaxy (LPE). For 100µm stripe laser with cavity length of 1mm, continuous wave (CW) output power of 4W, slope efficiency of 1.32W/A and far-field pattern of 11°×28°were obtained.
High brightness white light-emitting diode (LED) was fabricated by using the self-produced InGaN single quantum-well (SQW) blue LED chip and YAG:Ce<sup>3+</sup> phosphor. The luminous intensity of the white LED was up to 2.3cd, the chromaticity coordinate was (0.28,0.34), and the color-rendering index was about 75 at forward current of 20mA and room temperature.
Doped (Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>0.5</sub>In<sub>0.</sub>P alloys were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). It was demonstrated that the Zn-doped concentration in AlGaInP alloys was increased with the reducing of growth temperature and Al composition and the enhancing of dimethylzinc (DEZn) flow rate, also, the Si-doped concentration was reduced as the rising of growth temperature and silane (SiH<sub>4</sub>) flow rate.
The violet-LEDs structure with InGaN/GaN multi-quantumn-wells (MQW) was grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The x-ray diffraction (XRD) revealed distinct second order satellite peak. The photoluminescence (PL) wavelength was about 399.5nm with FWHM of about 15.5nm. InGaN/GaN MQW violet-LEDs have been successfully fabricated with EL wavelength of 402nm and forward voltage about 3.6V under 20 mA injection current.