High-refractive-index (HRI) dielectric metasurfaces have attracted a lot of attention recently due to their advantages of low non-radiative losses and high melting temperatures. Silicon is one of feasible HRI materials that has been widely used in solar cells, photonic waveguides, and photon detectors. However, the band-gap ~ 1 eV makes the quantum efficiency of silicon low at near-infrared (NIR) wavelengths. In this work, a high absorptance device is proposed and realized by using amorphous silicon nanoantenna arrays (a-Si NA arrays) that suppress backward and forward scattering with engineered lattice resonance with Kerker effect. The overlap of electric dipole and magnetic dipole resonances is experimentally demonstrated. The absorptance of a-Si NA arrays increases 3-fold in the near-infrared (NIR) range in comparison to unpatterned silicon films. Nonradiating a-Si NA arrays can achieve high absorptance with a small resonance bandwidth (Q = 11.89) at wavelength 785 nm.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.