Directed self-assembly (DSA) with block-copolymers (BCP) is a promising lithography extension technique to scale below 30nm pitch with 193i lithography. Continued scaling toward 20nm pitch or below will require material system improvements from PS-b-PMMA. Pattern quality for DSA features, such as line edge roughness (LER), line width roughness (LWR), size uniformity, and placement, is key to DSA manufacturability. In this work, we demonstrate finFET devices fabricated with DSA-patterned fins and compare several BCP systems for continued pitch scaling. Organic-organic high chi BCPs at 24nm and 21nm pitches show improved low to mid-frequency LER/LWR after pattern transfer.
Block-copolymers (BCPs) offer the potential to meet the demands of next generation lithographic materials as they can self-assemble into scalable and tailorable nanometer scale patterns. In order for these materials to find wide spread adoption many challenges remain, including reproducible thin film morphology, for which the purity of block copolymers is critical. One of the sources of impurities are reaction conditions used to synthesize block copolymers that may result in the formation of homopolymer as a side product, which can impact the quality and the morphology of self-assembled features. Detection and characterization of these homopolymer impurities can be challenging by traditional methods of polymer characterization. We will discuss an alternate NMR-based method for the detection of homopolymer impurities in block copolymers – contrast enhanced diffusion ordered spectroscopy (CEDOSY). This experimental technique measures the diffusion coefficient of polymeric materials in the solution allowing for the ‘virtual’ or spectroscopic separation of BCPs that contain homopolymer impurities. Furthermore, the contrast between the diffusion coefficient of mixtures containing BCPs and homopolymer impurities can be enhanced by taking advantage of the chemical mismatch of the two blocks to effectively increase the size of the BCP (and diffusion coefficient) through the formation of micelles using a cosolvent, while the size and diffusion coefficient of homopolymer impurities remain unchanged. This enables the spectroscopic separation of even small amounts of homopolymer impurities that are similar in size to BCPs. Herein, we present the results using the CEDOSY technique with both first generation BCP system, poly(styrene)-b-poly(methyl methacrylate), as well as a second generation high-χ system.
To extend scaling beyond poly(styrene-b-methyl methacrylate) (PS-b-PMMA) for directed self-assembly (DSA), high quality organic high-x block copolymers (HC series) were developed and applied to implementation of sub-10 nm L/S DSA. Lamellae-forming block copolymers (BCPs) of the HC series showed the ability to form vertically oriented polymer domains conveniently with the in-house PS-r-PMMA underlayers (AZEMBLY EXP NLD series) without the use of an additional topcoat. The orientation control was achieved with low bake temperatures (≤200 °C) and short bake times (≤5 min). Also, these process-friendly materials are compatible with existing 193i-based graphoepitaxy and chemoepitaxy DSA schemes. In addition, it is notable that 8.5 nm organic lamellae domains were amenable to pattern development by simple dry etch techniques. These successful demonstrations of high-x L/S DSA on 193i-defined guiding patterns and pattern development can offer a feasible route to access sub-10 nm node patterning technology.