InGaN/GaN blue light emitting diodes with varied quantum well thickness from 2.4 nm to 3.6 nm are fabricated and
characterized by atmosphere pressure metalorganic chemical vapor deposition (AP-MOCVD). Experimental results
show that the exciton localization effect is enhanced from 21.76 to 23.48 by increasing the quantum well thickness
from 2.4 nm to 2.7 nm. However, with the further increase of quantum well thickness, the exciton localization effect
becomes weaker. Meanwhile, the peak wavelength of electroluminescence redshift with the increase of well
thickness due to the larger quantum confined Stark effect (QCSE). In addition, the efficiency droop can be improved
by increasing the well thickness.