Proc. SPIE. 9142, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013
This paper, the electron irradiation-induced defects in undoped InP has undergone a high-temperature annealing in iron phosphide ambience. The positron annihilation lifetime spectroscopy (PAL) and thermally stimulated current spectroscopy (TSC) have been employed to study it . The results proved that, the defects in SI-InP after electron irradiation increases and the complex defects are formed . The positron mean lifetime increases about 18 ps , and more defect peaks are also found in the TSC after irradiation.