Engineering a low-cost graphene- based opto-electronic device is a challenging task to accomplish via a single-step fabrication process. Recently scientists have started focusing on the development and use of a laser-based method for efficient reduction of graphene oxide (GO) films at low-temperature. Our proposed technique utilizes a laser beam for non thermal reduction of solution processed GO layers onto film substrates. Compared to other reduction techniques, it is a single-step, facile, time consuming, non-contact operation, environment-friendly, patternable, low cost, and can be performed at room temperature in ambient atmosphere without affecting the integrity of either the physical properties or the lattice of graphene. Laser scribed reduced graphene (LSRG) is shown to be successfully produced and selectively patterned from the direct laser irradiation of graphite oxide films under ambient conditions. In addition, by varying the laser's intensity, power, and irradiation treatments, the electrical properties of LSRG can be accurately attune over five orders of magnitude of conductivity. Feature has proven difficulty with other methods. This credible, scalable approach is mask-free, does not require certain expensive chemical reduction agents, and can be performed at ambient conditions starting from aqueous graphene oxide flakes. The non thermal nature of this method combined with its scalability and simplicity, makes it very attractive for the manufacturing of future generation large-volume graphene-based opto/electronics.
Localized Surface Plasmon Resonance (LSPR) that occur in plasmonic nanoparticles due to interaction with electromagnetic waves at wavelengths larger than the nanoparticles themselves has been exploited in many application like solar cells, cancer treatment and spectroscopy due to the enhanced scattering and absorption cross sections that LSPR provides. Being able to control the resonance peaks of scattering in real time using light can be a valuable tool for sensing-related applications as well especially if it happens in the near and Mid-IR spectrum where most of the biological molecules can be sensed as such spectrum contains strong characteristic vibrational transitions of many important molecules . In this work presented here, we used silicon nanoparticles and increased the concentration of free excess carriers in the nanoparticles by light generation until the free carrier concentration was large enough to cause LSPR similar to what we get with nanoparticles made of Noble metals. The LSPR generated by Si nanoparticles with high concentration of free carriers caused the resonance peak to happen in near and mid IR. Depending on the level of carrier concentration which can be changed dynamically in real time, we can control the scattering resonance peak characteristics and position as shown in our work. Successful fabrication of the Silicon nanosphere is demonstrated as well.