We report recent developments in Bragg soliton dynamics on an ultra-silicon-rich nitride chip, including gap soliton-based tunable slow light and pure quartic Bragg solitons.
Silicon-rich nitride (SRN) devices provide higher optical nonlinearity than stoichiometric silicon nitride. Their growth using CMOS-compatible chemical vapor deposition allows their composition to be tunable. Conventional SRN typically utilizes silane gas which introduces absorption overtones at the 1.55μm wavelength region. As is also the case with stoichiometric silicon nitride, high temperature annealing can be used to reduce Si-H based absorption. An alternate approach towards eliminating Si-H absorption is by replacing silane gas with deuterated silane. The substitution of Si-H with Si-D induces a blue shift in the wavenumber of the bond absorption, thus removing the absorption overtone at the telecommunications region. Consequently, deuterated SRN provides lower material losses compared to non-deuterated SRN, while providing a design degree of freedom for tailoring its linear and nonlinear refractive indices. We present the material properties for deuterated SRN and its application towards linear and nonlinear photonic devices. We demonstrate improved device losses when deuterated SRN is used compared to non-deuterated SRN. We further quantify the optical properties and nonlinearity of grown films and demonstrate low power parametric wavelength conversion in deuterated SRN ring resonators.
A high-quality heralded single photon source is realized on silicon-on-insulator (SOI) platform. With the help of specially designed ultra-low loss fiber-chip edge couplers, the heralding efficiency of the single photon source system is 56%, after calibrating for a 38% detector efficiency. Compared with the state of the art, this measured heralding efficiency marks a new milestone for integrated, on-chip silicon sources.
We designed and fabricated a -0.64 dB loss hybrid coupling platform for silicon chips. The coupler is also stable enough to maintain within +-0.1 dB coupling fluctuation against 20 um fiber holder movement. This feature allows a constant photon stream over ten days with no active alignment mechanism. Furthermore, the fiber is engineered with centimeterlong small-core fiber spliced on the tip. This minimizes Raman noise and provides high stability compared with other coupling solutions based on ordinary UHNA fibers or lensed fibers.
We present an improved CMOS-compatible USRN material prepared using DCS-based chemistry deposited at a low temperature of ~300°C. Morphology and composition of these USRN films are characterized using SEM, TEM, EDS and AFM. Surface profilometer is also used to estimate the film stress over an 8-inch wafer. TEM shows that the USRN film is amorphous and AFM measures a low roughness RMS of ~0.4 nm over a scan window of 3 μm x 3 μm. Optical properties of these USRN films are studied using variable-angle spectroscopic ellipsometry and FTIR spectroscopy. A prism coupler is used to estimate the film propagation loss. Ellipsometry measurement shows refractive index of around 3.09 at 1550 nm wavelength, which is our wavelength of interest. Comparing with USRN films prepared using SiH4- based chemistry, FTIR characterization shows reduced absorbance for films prepared using DCS-based chemistry at wavenumber region where Si-H bonds are located. The absorbance caused by N-H bonds are comparable for USRN films prepared using both DCS-based and SiH4-based chemistries. Si-H bonds and N-H bonds are expected to be the main sources of material absorption near 1550 nm in the USRN material. Characterization results of waveguides fabricated using USRN deposited by this DCS-based chemistry shows propagation loss of ~4.9 dB/cm for waveguide width of 1.5 μm at 1550 nm wavelength. The improved results of DCS-based USRN will help to further cut losses and therefore enhance the performance of CMOS compatible USRN devices in nonlinear signal processing.
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