Proceedings Article | 27 November 2012
Proc. SPIE. 8555, Optoelectronic Devices and Integration IV
KEYWORDS: Semiconductors, Electrons, Photonic crystals, Quantum dots, Transform theory, Optical simulations, Laser damage threshold, Excitons, Optical microcavities, Correlation function
Single quantum dot-cavity system with a deep confinement potential quantum dot is detailedly investigated, with both s- and p-exciton incoherent pump. Through gradually increasing pump rate (about 10<sup>-4</sup>=<i>ps </i>∼ 12=<i>ps</i>), the mean photon number shows a linear-dependence on pump power, the photon probability distribution, characterized by <i>g</i><sup>(2)</sup>(0), transforms from antibunching to bunching through Poisson, and the spectra go from the doublet to a singlet, the linewidth shows clear reduction in the lasing region. If we increase pump rate further, the mean photon number decreases monotonically to zero, g(2)(0) reaches its maximum value 2, and all the electrons stack at upper lasing level, indicating thermal light generation. The results show, the deep QD-cavity system under s- and p-exciton pump can generate laser although it is not an ideal coherent light, and with only p-exciton pump considered, in spite of the coherent light generated, this pump method is unreasonable to simulate the experimental conditions for the negligible energy spacing between s-exciton and p-exciton.
