Extreme ultraviolet lithography (EUVL) has received a considerable attention in the semiconductor industry as a promising candidate to achieve the high resolution pattern beyond 10nm. To achieve it, pellicle is essential to prevent the reticle from particle contamination during EUV scanning process. In this study, we present the full-size pellicle for EUVL. Full-size EUV pellicles with SiNx or single-crystalline Si core films were successfully fabricated, and the highest EUV transmittances obtained were 83% and 91%, respectively. Various capping layers were deposited on top of the Si or SiNx core films, and these pellicles were exposed to 355nm UV laser in order to emulate the EUV exposure. Especially, after EUV exposure, Ru emission layer exhibited cooling effect (ΔT) of 600-800 °C with 3nm on SiNx membrane The highest transmittances of full size pellicles with Ru emission layer on SiNx and Si core films obtained were 81% and 88%, respectively.