We have developed surface micromachined Infrared ray (IR) focal plane array (FPA), in which single SiO2 layer works as an IR absorbing plate and Pb(Zr0.3Ti0.7)O3 thin film served as a thermally sensitive material. There are some advantages of applying SiO2 layer as an IR absorbing layer. First of all, the SiO2 has good IR absorbance within 8 ~ 12 μm spectrum range. Measured value showed about 60% absorbance of incident IR spectrum in the range. SiO2 layer has another important merit when applied to the top of Pt/PZT/Pt stack because it works also as a supporting membrane. Consequently, the IR absorbing layer forms one body with membrane structure, which simplifies the whole MEMS process and gives robustness to the structure.