One of the major challenges of InAs/GaSb superlattice devices arises owing to the large number of surface states generated during fabrication processes. Surface passivation and subsequent capping of the surfaces are essential for any practical applicability of this material system. In this paper, we passivated InAs/GaSb superlattice infrared detectors proposed anodic fluoride passivation method. Short and mid wavelength InAs/GaSb superlattice infrared materials were grown by Molecular Beam Epitaxy (MBE) on GaSb (100) substrates. A GaSb buffer layer was grown for optimized superlattice growth condition, which can decrease the occurrence of defects with similar pyramidal structure. The result of auger electron spectroscopy (AES) surface scans after anodic fluoride passivation confirms that anodic fluoride passivation treatment did affect. The leakage current as a function of bias voltage (I-V) for InAs/GaSb superlattice infrared detectors has been examined at 77K. Compared with the unpassivated approach, this passivation methods decrease the dark current by approximately five orders of magnitude.